Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.
Nanotechnology
; 25(24): 245602, 2014 Jun 20.
Article
em En
| MEDLINE
| ID: mdl-24869600
ABSTRACT
We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2014
Tipo de documento:
Article
País de afiliação:
Estados Unidos