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Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3.
Ye, Mao; Li, Wei; Zhu, Siyuan; Takeda, Yukiharu; Saitoh, Yuji; Wang, Jiajia; Pan, Hong; Nurmamat, Munisa; Sumida, Kazuki; Ji, Fuhao; Liu, Zhen; Yang, Haifeng; Liu, Zhengtai; Shen, Dawei; Kimura, Akio; Qiao, Shan; Xie, Xiaoming.
Afiliação
  • Ye M; State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
  • Li W; CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.
  • Zhu S; State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
  • Takeda Y; CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.
  • Saitoh Y; Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
  • Wang J; Condensed Matter Science Division, Quantum Beam Science Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan.
  • Pan H; Condensed Matter Science Division, Quantum Beam Science Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan.
  • Nurmamat M; School of physical science and technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
  • Sumida K; Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
  • Ji F; Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
  • Liu Z; Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
  • Yang H; Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
  • Liu Z; Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
  • Shen D; State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
  • Kimura A; State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
  • Qiao S; State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
  • Xie X; CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.
Nat Commun ; 6: 8913, 2015 Nov 19.
Article em En | MEDLINE | ID: mdl-26582485

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2015 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2015 Tipo de documento: Article País de afiliação: China
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