Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Yao, Maoqing; Sheng, Chunyang; Ge, Mingyuan; Chi, Chun-Yung; Cong, Sen; Nakano, Aiichiro; Dapkus, P Daniel; Zhou, Chongwu

Yao, Maoqing; Sheng, Chunyang; Ge, Mingyuan; Chi, Chun-Yung; Cong, Sen; Nakano, Aiichiro; Dapkus, P Daniel; Zhou, Chongwu.

Afiliação

Yao M; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Sheng C; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Ge M; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Chi CY; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Cong S; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Nakano A; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Dapkus PD; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci
Zhou C; Ming Hsieh Department of Electrical Engineering, Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Sci

ACS Nano ; 10(2): 2424-35, 2016 Feb 23.

Article em En | MEDLINE | ID: mdl-26831573

Palavras-chave

GaAs on Si; MOCVD; TEM; heteroepitaxy; nanowires; thermodynamics; twin defect

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article