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Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors.
Lee, Inyeal; Rathi, Servin; Lim, Dongsuk; Li, Lijun; Park, Jinwoo; Lee, Yoontae; Yi, Kyung Soo; Dhakal, Krishna P; Kim, Jeongyong; Lee, Changgu; Lee, Gwan-Hyoung; Kim, Young Duck; Hone, James; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho.
Afiliação
  • Lee I; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Rathi S; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Lim D; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Li L; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Park J; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Lee Y; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Yi KS; Department of Physics, Pusan National University, Busan, 46241, Korea.
  • Dhakal KP; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.
  • Kim J; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.
  • Lee C; Department of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
  • Lee GH; Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea.
  • Kim YD; Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
  • Hone J; Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
  • Yun SJ; ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.
  • Youn DH; ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.
  • Kim GH; Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Adv Mater ; 28(43): 9519-9525, 2016 Nov.
Article em En | MEDLINE | ID: mdl-27619888
ABSTRACT
An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2 , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2 /MoS2 dual-channel FET.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2016 Tipo de documento: Article
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2016 Tipo de documento: Article