Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al <sub>x</sub> Ga<sub>1-x</sub> As/GaAs quantum wells by magneto-photoluminescence.

Haldar, S; Dixit, V K; Vashisht, Geetanjali; Khamari, Shailesh Kumar; Porwal, S; Sharma, T K; Oak, S M

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al _x Ga_1-x As/GaAs quantum wells by magneto-photoluminescence.

Haldar, S; Dixit, V K; Vashisht, Geetanjali; Khamari, Shailesh Kumar; Porwal, S; Sharma, T K; Oak, S M.

Afiliação

Haldar S; Semiconductor Physics and Devices Laboratory, Solid State Laser Division, Raja Ramanna Center for Advanced Technology, Indore, Madhya Pradesh, 452013, India. subhomoy@rrcat.gov.in.
Dixit VK; Homi Bhabha National Institute, Anushakti Nagar, Mumbai, 400094, India. subhomoy@rrcat.gov.in.
Vashisht G; Semiconductor Physics and Devices Laboratory, Solid State Laser Division, Raja Ramanna Center for Advanced Technology, Indore, Madhya Pradesh, 452013, India. dixit@rrcat.gov.in.
Khamari SK; Homi Bhabha National Institute, Anushakti Nagar, Mumbai, 400094, India. dixit@rrcat.gov.in.
Porwal S; Semiconductor Physics and Devices Laboratory, Solid State Laser Division, Raja Ramanna Center for Advanced Technology, Indore, Madhya Pradesh, 452013, India.
Sharma TK; Semiconductor Physics and Devices Laboratory, Solid State Laser Division, Raja Ramanna Center for Advanced Technology, Indore, Madhya Pradesh, 452013, India.
Oak SM; Homi Bhabha National Institute, Anushakti Nagar, Mumbai, 400094, India.

Sci Rep ; 7(1): 4905, 2017 07 07.

Article em En | MEDLINE | ID: mdl-28687735

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Índia

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