Promising Approach for High-Performance MoS<sub>2</sub> Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers.

Su, Jie; Feng, Li-Ping; Zheng, Xiaoqi; Hu, Chenlu; Lu, Hongcheng; Liu, Zhengtang

Promising Approach for High-Performance MoS₂ Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers.

Su, Jie; Feng, Li-Ping; Zheng, Xiaoqi; Hu, Chenlu; Lu, Hongcheng; Liu, Zhengtang.

Afiliação

Su J; State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University , Xi'an, Shaanxi 710072, PR China.
Feng LP; State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University , Xi'an, Shaanxi 710072, PR China.
Zheng X; State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University , Xi'an, Shaanxi 710072, PR China.
Hu C; State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University , Xi'an, Shaanxi 710072, PR China.
Lu H; Department of Physics, Duke University , Durham, North Carolina 27708, United States.
Liu Z; State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University , Xi'an, Shaanxi 710072, PR China.

ACS Appl Mater Interfaces ; 9(46): 40940-40948, 2017 Nov 22.

Article em En | MEDLINE | ID: mdl-29083857

Palavras-chave

BN buffer layer; MoS2; Schottky barrier; density functional theory; doping

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2017 Tipo de documento: Article

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