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Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy.
Liu, Huajun; Dong, Yongqi; Cherukara, Mathew J; Sasikumar, Kiran; Narayanan, Badri; Cai, Zhonghou; Lai, Barry; Stan, Liliana; Hong, Seungbum; Chan, Maria K Y; Sankaranarayanan, Subramanian K R S; Zhou, Hua; Fong, Dillon D.
Afiliação
  • Liu H; Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Dong Y; Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , Singapore 138634 , Singapore.
  • Cherukara MJ; Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Sasikumar K; National Synchrotron Radiation Laboratory , University of Science and Technology of China , Hefei , Anhui 230026 , China.
  • Narayanan B; X-ray Science Division, Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Cai Z; Center for Nanoscale Materials, Nanoscience and Technology Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Lai B; Center for Nanoscale Materials, Nanoscience and Technology Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Stan L; X-ray Science Division, Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Hong S; X-ray Science Division, Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Chan MKY; Center for Nanoscale Materials, Nanoscience and Technology Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Sankaranarayanan SKRS; Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
  • Zhou H; Department of Materials Science and Engineering, KAIST , Daejeon 34141 , Korea.
  • Fong DD; Center for Nanoscale Materials, Nanoscience and Technology Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States.
ACS Nano ; 12(5): 4938-4945, 2018 05 22.
Article em En | MEDLINE | ID: mdl-29715007
ABSTRACT
Memristive devices are an emerging technology that enables both rich interdisciplinary science and novel device functionalities, such as nonvolatile memories and nanoionics-based synaptic electronics. Recent work has shown that the reproducibility and variability of the devices depend sensitively on the defect structures created during electroforming as well as their continued evolution under dynamic electric fields. However, a fundamental principle guiding the material design of defect structures is still lacking due to the difficulty in understanding dynamic defect behavior under different resistance states. Here, we unravel the existence of threshold behavior by studying model, single-crystal devices resistive switching requires that the pristine oxygen vacancy concentration reside near a critical value. Theoretical calculations show that the threshold oxygen vacancy concentration lies at the boundary for both electronic and atomic phase transitions. Through operando, multimodal X-ray imaging, we show that field tuning of the local oxygen vacancy concentration below or above the threshold value is responsible for switching between different electrical states. These results provide a general strategy for designing functional defect structures around threshold concentrations to create dynamic, field-controlled phases for memristive devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos
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