Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS<sub>2</sub> flake based field effect transistors on SiO<sub>2</sub> and hBN substrates.

Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo-Hyeb; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS₂ flake based field effect transistors on SiO₂ and hBN substrates.

Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo-Hyeb; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho.

Afiliação

Lee C; School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.

Nanotechnology ; 29(33): 335202, 2018 Aug 17.

Article em En | MEDLINE | ID: mdl-29786609

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2018 Tipo de documento: Article