Quasi One-Dimensional Metal-Semiconductor Heterostructures.

Benter, S; Dubrovskii, V G; Bartmann, M; Campo, A; Zardo, I; Sistani, M; Stöger-Pollach, M; Lancaster, S; Detz, H; Lugstein, A

Benter, S; Dubrovskii, V G; Bartmann, M; Campo, A; Zardo, I; Sistani, M; Stöger-Pollach, M; Lancaster, S; Detz, H; Lugstein, A.

Afiliação

Benter S; Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria.
Dubrovskii VG; Division of Synchrotron Radiation Research , Lund University , Sölvegatan 14 , 221 00 Lund , Sweden.
Bartmann M; ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia.
Campo A; Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria.
Zardo I; Department of Physics , University of Basel , Klingelbergstrasse 82 , 4056 Basel , Switzerland.
Sistani M; Department of Physics , University of Basel , Klingelbergstrasse 82 , 4056 Basel , Switzerland.
Stöger-Pollach M; Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria.
Lancaster S; University Service Center for TEM , TU Wien , Wiedner Hauptstraße 8-10 , 1040 Vienna Austria.
Detz H; Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria.
Lugstein A; Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria.

Nano Lett ; 19(6): 3892-3897, 2019 06 12.

Article em En | MEDLINE | ID: mdl-31117757

Palavras-chave

GaAs; Nanowire; gold; metal−semiconductor heterostructure; quasi 1D contacts

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Áustria

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