Accurate Threshold Voltage Reliability Evaluation of Thin Al<sub>2</sub>O<sub>3</sub> Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses.

Goyal, Natasha; Parihar, Narendra; Jawa, Himani; Mahapatra, Souvik; Lodha, Saurabh

Accurate Threshold Voltage Reliability Evaluation of Thin Al₂O₃ Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses.

Goyal, Natasha; Parihar, Narendra; Jawa, Himani; Mahapatra, Souvik; Lodha, Saurabh.

Afiliação

Goyal N; Department of Electrical Engineering , IIT Bombay , Mumbai 400076 , India.
Parihar N; Department of Electrical Engineering , IIT Bombay , Mumbai 400076 , India.
Jawa H; Department of Electrical Engineering , IIT Bombay , Mumbai 400076 , India.
Mahapatra S; Department of Electrical Engineering , IIT Bombay , Mumbai 400076 , India.
Lodha S; Department of Electrical Engineering , IIT Bombay , Mumbai 400076 , India.

ACS Appl Mater Interfaces ; 11(26): 23673-23680, 2019 Jul 03.

Article em En | MEDLINE | ID: mdl-31252490

Palavras-chave

2D materials; 2D transistor reliability; black phosphorous; black phosphorous stability; threshold voltage instability; top/front gate black phosphorus transistors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Índia

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