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Interplay of Atomic Interactions in the Intermetallic Semiconductor Be5 Pt.
Amon, Alfred; Svanidze, Eteri; Ormeci, Alim; König, Marcus; Kasinathan, Deepa; Takegami, Daisuke; Prots, Yurii; Liao, Yen-Fa; Tsuei, Ku-Ding; Tjeng, Liu Hao; Leithe-Jasper, Andreas; Grin, Yuri.
Afiliação
  • Amon A; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Svanidze E; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Ormeci A; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • König M; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Kasinathan D; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Takegami D; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Prots Y; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Liao YF; National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, 30076, Hsinchu, Taiwan.
  • Tsuei KD; National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, 30076, Hsinchu, Taiwan.
  • Tjeng LH; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Leithe-Jasper A; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
  • Grin Y; Department Chemische Metallkunde, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01277, Dresden, Germany.
Angew Chem Int Ed Engl ; 58(44): 15928-15933, 2019 Oct 28.
Article em En | MEDLINE | ID: mdl-31483920
Semiconducting substances form one of the most important families of functional materials. However, semiconductors containing only metals are very rare. The chemical mechanisms behind their ground-state properties are only partially understood. Our investigations have rather unexpectedly revealed the semiconducting behaviour (band gap of 190 meV) for the intermetallic compound Be5 Pt formed at a very low valence-electron count. Quantum-chemical analysis shows strong charge transfer from Be to Pt and reveals a three-dimensional entity of vertex-condensed empty Be4 tetrahedrons with multi-atomic cluster bonds interpenetrated by the framework of Pt-filled vertex-condensed Be4 tetrahedrons with two-atomic polar Be-Pt bonds. The combination of strong Coulomb interactions with relativistic effects results in a band gap.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Alemanha

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Alemanha
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