Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization.

Kim, Hye-Mi; Choi, Su-Hwan; Jeong, Hyun Jun; Lee, Jung-Hoon; Kim, Junghwan; Park, Jin-Seong

Kim, Hye-Mi; Choi, Su-Hwan; Jeong, Hyun Jun; Lee, Jung-Hoon; Kim, Junghwan; Park, Jin-Seong.

Afiliação

Kim HM; Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Choi SH; Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Jeong HJ; Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Lee JH; Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Kim J; Materials Research Center for Element Strategy, Tokyo Institute of Technology, Nagatsuta 4259, Yohohama 226-8503, Japan.
Park JS; Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.

ACS Appl Mater Interfaces ; 13(26): 30818-30825, 2021 Jul 07.

Article em En | MEDLINE | ID: mdl-34156823

Palavras-chave

atomic layer deposition (ALD); crystallization; nitrogen annealing; p-type oxide semiconductor; thin-film transistor; tin monoxide (SnO)

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2021 Tipo de documento: Article

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