Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides.

Wang, Xirui; Yasuda, Kenji; Zhang, Yang; Liu, Song; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Fu, Liang; Jarillo-Herrero, Pablo

Wang, Xirui; Yasuda, Kenji; Zhang, Yang; Liu, Song; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Fu, Liang; Jarillo-Herrero, Pablo.

Afiliação

Wang X; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Yasuda K; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA. yasuda@mit.edu.
Zhang Y; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Liu S; Department of Mechanical Engineering, Columbia University, New York, NY, USA.
Watanabe K; National Institute for Materials Science, Tsukuba, Japan.
Taniguchi T; National Institute for Materials Science, Tsukuba, Japan.
Hone J; Department of Mechanical Engineering, Columbia University, New York, NY, USA.
Fu L; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Jarillo-Herrero P; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA. pjarillo@mit.edu.

Nat Nanotechnol ; 17(4): 367-371, 2022 Apr.

Article em En | MEDLINE | ID: mdl-35039684

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

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