Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot-Metal Oxide Semiconductor Heterojunctions.
ACS Nano
; 16(6): 8651-8661, 2022 06 28.
Article
em En
| MEDLINE
| ID: mdl-35451308
ABSTRACT
Optoelectronic synaptic transistors with hybrid heterostructure channels have been extensively developed to construct artificial visual systems, inspired by the human visual system. However, optoelectronic transistors taking full advantages of superior optoelectronic synaptic behaviors, low-cost processes, low-power consumption, and environmental benignity remained a challenge. Herein, we report a fully printed, high-performance optoelectronic synaptic transistor based on hybrid heterostructures of heavy-metal-free InP/ZnSe core/shell quantum dots (QDs) and n-type SnO2 amorphous oxide semiconductors (AOSs). The elaborately designed heterojunction improves the separation efficiency of photoexcited charges, leading to high photoresponsivity and tunable synaptic weight changes. Under the coordinated modulation of electrical and optical modes, important biological synaptic behaviors, including excitatory postsynaptic current, short/long-term plasticity, and paired-pulse facilitation, were demonstrated with a low power consumption (â¼5.6 pJ per event). The InP/ZnSe QD/SnO2 based artificial vision system illustrated a significantly improved accuracy of 91% in image recognition, compared to that of bare SnO2 based counterparts (58%). Combining the outstanding synaptic characteristics of both AOS materials and heterojunction structures, this work provides a printable, low-cost, and high-efficiency strategy to achieve advanced optoelectronic synapses for neuromorphic electronics and artificial intelligence.
Palavras-chave
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Transistores Eletrônicos
/
Pontos Quânticos
Limite:
Humans
Idioma:
En
Revista:
ACS Nano
Ano de publicação:
2022
Tipo de documento:
Article
País de afiliação:
China