Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid.

Kim, Yoon-Seo; Oh, Hye-Jin; Shin, Seungki; Oh, Nuri; Park, Jin-Seong

Kim, Yoon-Seo; Oh, Hye-Jin; Shin, Seungki; Oh, Nuri; Park, Jin-Seong.

Afiliação

Kim YS; Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea.
Oh HJ; Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea.
Shin S; Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea.
Oh N; Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea. irunho@hanyang.ac.kr.
Park JS; Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea. jsparklime@hanyang.ac.kr.

Sci Rep ; 12(1): 12167, 2022 Jul 16.

Article em En | MEDLINE | ID: mdl-35842484

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article