Temperature induced giant shift of phonon energy in epitaxial boron nitride layers.

Iwanski, J; Tatarczak, P; Tokarczyk, M; Da Browska, A K; Pawlowski, J; Binder, J; Kowalski, G; StÈ©pniewski, R; Wysmolek, A

Iwanski, J; Tatarczak, P; Tokarczyk, M; Da Browska, A K; Pawlowski, J; Binder, J; Kowalski, G; StÈ©pniewski, R; Wysmolek, A.

Afiliação

Iwanski J; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Tatarczak P; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Tokarczyk M; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Da Browska AK; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Pawlowski J; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Binder J; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Kowalski G; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
StÈ©pniewski R; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
Wysmolek A; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.

Nanotechnology ; 34(1)2022 Oct 17.

Article em En | MEDLINE | ID: mdl-36174391

Palavras-chave

E1u phonon; FTIR; MOVPE; defect charged states; epitaxial boron nitride; hBN

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Polônia

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