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Spontaneous Ferromagnetism Induced Topological Transition in EuB_{6}.
Liu, W L; Zhang, X; Nie, S M; Liu, Z T; Sun, X Y; Wang, H Y; Ding, J Y; Jiang, Q; Sun, L; Xue, F H; Huang, Z; Su, H; Yang, Y C; Jiang, Z C; Lu, X L; Yuan, J; Cho, Soohyun; Liu, J S; Liu, Z H; Ye, M; Zhang, S L; Weng, H M; Liu, Z; Guo, Y F; Wang, Z J; Shen, D W.
Afiliação
  • Liu WL; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Zhang X; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Nie SM; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Liu ZT; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Sun XY; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Wang HY; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Ding JY; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Jiang Q; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Sun L; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Xue FH; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Huang Z; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Su H; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Yang YC; School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Jiang ZC; School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Lu XL; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Yuan J; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Cho S; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Liu JS; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Liu ZH; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Ye M; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Zhang SL; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Weng HM; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Liu Z; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Guo YF; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wang ZJ; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Shen DW; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Phys Rev Lett ; 129(16): 166402, 2022 Oct 14.
Article em En | MEDLINE | ID: mdl-36306743
ABSTRACT
The interplay between various symmetries and electronic bands topology is one of the core issues for topological quantum materials. Spontaneous magnetism, which leads to the breaking of time-reversal symmetry, has been proven to be a powerful approach to trigger various exotic topological phases. In this Letter, utilizing the combination of angle-resolved photoemission spectroscopy, magneto-optical Kerr effect microscopy, and first-principles calculations, we present the direct evidence on the realization of the long-sought spontaneous ferromagnetism induced topological transition in soft ferromagnetic EuB_{6}. Explicitly, we reveal the topological transition is from Z_{2}=1 topological insulator in paramagnetic state to χ=1 magnetic topological semimetal in low temperature ferromagnetic state. Our results demonstrate that the simple band structure near the Fermi level and rich topological phases make EuB_{6} an ideal platform to study the topological phase physics.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China