Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications.

Xu, Wangying; Peng, Tao; Zhuo, Shuangmu; Lin, Qiubao; Huang, Weicheng; Li, Yujia; Xu, Fang; Zhao, Chun; Zhu, Deliang

Xu, Wangying; Peng, Tao; Zhuo, Shuangmu; Lin, Qiubao; Huang, Weicheng; Li, Yujia; Xu, Fang; Zhao, Chun; Zhu, Deliang.

Afiliação

Xu W; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
Peng T; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.
Zhuo S; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
Lin Q; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
Huang W; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
Li Y; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.
Xu F; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
Zhao C; Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
Zhu D; College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.

Int J Mol Sci ; 23(21)2022 Oct 26.

Article em En | MEDLINE | ID: mdl-36361699

Assuntos

Fósforo; Transistores Eletrônicos; Índio/química; Oxigênio

Palavras-chave

crystalline oxide semiconductors; phosphorus doped indium oxide; solution-grown; thin-film transistors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Fósforo / Transistores Eletrônicos Idioma: En Revista: Int J Mol Sci Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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