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Analytical and Physical Investigation on Source Resistance in InxGa1-xAs Quantum-Well High-Electron-Mobility Transistors.
Yoo, Ji-Hoon; Lee, In-Geun; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki; Lee, Jae-Hak; Kim, Dae-Hyun.
Afiliação
  • Yoo JH; School of Electronic and Electrical Engineering, Kyungpook National University (KNU), Daegu 41566, Republic of Korea.
  • Lee IG; School of Electronic and Electrical Engineering, Kyungpook National University (KNU), Daegu 41566, Republic of Korea.
  • Tsutsumi T; NTT Device Technology Laboratories, Atsugi-shi 243-0198, Japan.
  • Sugiyama H; NTT Device Technology Laboratories, Atsugi-shi 243-0198, Japan.
  • Matsuzaki H; NTT Device Technology Laboratories, Atsugi-shi 243-0198, Japan.
  • Lee JH; School of Electronic and Electrical Engineering, Kyungpook National University (KNU), Daegu 41566, Republic of Korea.
  • Kim DH; School of Electronic and Electrical Engineering, Kyungpook National University (KNU), Daegu 41566, Republic of Korea.
Micromachines (Basel) ; 14(2)2023 Feb 12.
Article em En | MEDLINE | ID: mdl-36838139
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article