Measuring Band Modulation of MoS2 with Ferroelectric Gates.
Nano Lett
; 23(6): 2114-2120, 2023 Mar 22.
Article
em En
| MEDLINE
| ID: mdl-36867589
ABSTRACT
Electronic properties of two-dimensional (2D) materials can be significantly tuned by an external electric field. Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS2 modulated by a ferroelectric P(VDF-TrFE) gate with contact-mode scanning tunneling spectroscopy. When P(VDF-TrFE) is fully polarized, an electric field up to â¼0.62 V/nm through the MoS2 layers is inferred from the measured band edges, which affects the band structure significantly. First, strong band bending in the vertical direction signifies the Franz-Keldysh effect and a large extension of the optical absorption edge. Photons with energy of half the band gap are still absorbed with 20% of the absorption probability of photons at the band gap. Second, the electric field greatly enlarges the energy separations between the quantum-well subbands. Our study intuitively demonstrates the great potential of ferroelectric gates in band structure manipulation of 2D materials.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2023
Tipo de documento:
Article
País de afiliação:
China