Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition.

Song, Ji-Na; Oh, Min-Jung; Yoon, Chang-Bun

Effect of a ZrO₂ Seed Layer on an Hf_0.5Zr_0.5O₂ Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition.

Song, Ji-Na; Oh, Min-Jung; Yoon, Chang-Bun.

Afiliação

Song JN; Department of Advanced Materials Engineering, Tech University of Korea, Siheung-si 15073, Gyeonggi-do, Republic of Korea.
Oh MJ; Department of Advanced Materials Engineering, Tech University of Korea, Siheung-si 15073, Gyeonggi-do, Republic of Korea.
Yoon CB; Department of Advanced Materials Engineering, Tech University of Korea, Siheung-si 15073, Gyeonggi-do, Republic of Korea.

Materials (Basel) ; 16(5)2023 Feb 27.

Article em En | MEDLINE | ID: mdl-36903074

Palavras-chave

HZO; HfO2; PEALD; ZrO2; ferroelectric; seed layer

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article