Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing.

Liao, Junyi; Wen, Wen; Wu, Juanxia; Zhou, Yaming; Hussain, Sabir; Hu, Haowen; Li, Jiawei; Liaqat, Adeel; Zhu, Hongwei; Jiao, Liying; Zheng, Qiang; Xie, Liming

Liao, Junyi; Wen, Wen; Wu, Juanxia; Zhou, Yaming; Hussain, Sabir; Hu, Haowen; Li, Jiawei; Liaqat, Adeel; Zhu, Hongwei; Jiao, Liying; Zheng, Qiang; Xie, Liming.

Afiliação

Liao J; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
Wen W; Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China.
Wu J; University of Chinese Academy of Sciences, Beijing 100049, P.R. China.
Zhou Y; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
Hussain S; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
Hu H; Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China.
Li J; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
Liaqat A; School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
Zhu H; School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
Jiao L; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
Zheng Q; School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
Xie L; Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China.

ACS Nano ; 17(6): 6095-6102, 2023 Mar 28.

Article em En | MEDLINE | ID: mdl-36912657

Palavras-chave

InSe; ferroelectric semiconductor; in-memory computing; metal-oxide-ferroelectric semiconductor field-effect transistor; van der Waals

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article