Ballistic two-dimensional InSe transistors.

Jiang, Jianfeng; Xu, Lin; Qiu, Chenguang; Peng, Lian-Mao

Jiang, Jianfeng; Xu, Lin; Qiu, Chenguang; Peng, Lian-Mao.

Afiliação

Jiang J; Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
Xu L; Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
Qiu C; Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China. chenguangqiu@pku.edu.cn.
Peng LM; Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China. lmpeng@pku.edu.cn.

Nature ; 616(7957): 470-475, 2023 04.

Article em En | MEDLINE | ID: mdl-36949203

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

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