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Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing.
Wang, Li-Wen; Huang, Chih-Wei; Lee, Ke-Jing; Chu, Sheng-Yuan; Wang, Yeong-Her.
Afiliação
  • Wang LW; Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
  • Huang CW; Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
  • Lee KJ; Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
  • Chu SY; Program on Semiconductor Process Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan 701, Taiwan.
  • Wang YH; Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
Nanomaterials (Basel) ; 13(12)2023 Jun 13.
Article em En | MEDLINE | ID: mdl-37368281
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Taiwan
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Taiwan