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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.
Song, Min-Kyu; Kang, Ji-Hoon; Zhang, Xinyuan; Ji, Wonjae; Ascoli, Alon; Messaris, Ioannis; Demirkol, Ahmet Samil; Dong, Bowei; Aggarwal, Samarth; Wan, Weier; Hong, Seok-Man; Cardwell, Suma George; Boybat, Irem; Seo, Jae-Sun; Lee, Jang-Sik; Lanza, Mario; Yeon, Hanwool; Onen, Murat; Li, Ju; Yildiz, Bilge; Del Alamo, Jesús A; Kim, Seyoung; Choi, Shinhyun; Milano, Gianluca; Ricciardi, Carlo; Alff, Lambert; Chai, Yang; Wang, Zhongrui; Bhaskaran, Harish; Hersam, Mark C; Strukov, Dmitri; Wong, H-S Philip; Valov, Ilia; Gao, Bin; Wu, Huaqiang; Tetzlaff, Ronald; Sebastian, Abu; Lu, Wei; Chua, Leon; Yang, J Joshua; Kim, Jeehwan.
Afiliação
  • Song MK; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Kang JH; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Zhang X; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Ji W; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Ascoli A; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Messaris I; Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Demirkol AS; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Dong B; Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
  • Aggarwal S; Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
  • Wan W; Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
  • Hong SM; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Cardwell SG; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Boybat I; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Seo JS; The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
  • Lee JS; Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
  • Lanza M; IBM Research Europe, 8803 Rüschlikon, Switzerland.
  • Yeon H; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, United States.
  • Onen M; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Li J; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Yildiz B; School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
  • Del Alamo JA; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Kim S; Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Choi S; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Milano G; Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Ricciardi C; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Alff L; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Chai Y; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Wang Z; The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
  • Bhaskaran H; Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce, Torino 10135, Italy.
  • Hersam MC; Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi, Torino 10129, Italy.
  • Strukov D; Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany.
  • Wong HP; Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong 999077, China.
  • Valov I; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China.
  • Gao B; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Wu H; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Tetzlaff R; Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
  • Sebastian A; Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Lu W; Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States.
  • Chua L; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Yang JJ; Research Centre Juelich, PGI-7, Wilhelm-Johnen-Str., Juelich 52425, Germany.
  • Kim J; Institute of Electrochemistry and Energy Systems "Acad. E. Budewski", Bulgarain Academy of Sciences, "Acad. G. Bochev 10" str., 1113 Sofia, Bulgaria.
ACS Nano ; 17(13): 11994-12039, 2023 Jul 11.
Article em En | MEDLINE | ID: mdl-37382380
Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos