Why Te Doping Can Break the Traditional n-Type Doping Limit of Silicon.

Shim, Seungwon; Jang, Hyunwoo; Kang, Youngho

Shim, Seungwon; Jang, Hyunwoo; Kang, Youngho.

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Shim S; Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea.
Jang H; Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea.
Kang Y; Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea.

Inorg Chem ; 62(48): 19734-19740, 2023 Dec 04.

Article em En | MEDLINE | ID: mdl-37983074

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Inorg Chem Ano de publicação: 2023 Tipo de documento: Article