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Author Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing.
Wu, Guangjian; Zhang, Xumeng; Feng, Guangdi; Wang, Jingli; Zhou, Keji; Zeng, Jinhua; Dong, Danian; Zhu, Fangduo; Yang, Chenkai; Zhao, Xiaoming; Gong, Danni; Zhang, Mengru; Tian, Bobo; Duan, Chungang; Liu, Qi; Wang, Jianlu; Chu, Junhao; Liu, Ming.
Afiliação
  • Wu G; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Zhang X; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.
  • Feng G; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
  • Wang J; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Zhou K; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.
  • Zeng J; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
  • Dong D; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
  • Zhu F; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Yang C; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Zhao X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
  • Gong D; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Zhang M; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Tian B; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
  • Duan C; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
  • Liu Q; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
  • Wang J; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Chu J; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China. bbtian@ee.ecnu.edu.cn.
  • Liu M; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
Nat Mater ; 23(5): 723, 2024 May.
Article em En | MEDLINE | ID: mdl-38168808
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China