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Obtaining giant Rashba-Dresselhaus spin splitting in two-dimensional chiral metal-organic frameworks.
Liu, Shanshan; Xu, Ke; Li, Xingxing; Li, Qunxiang; Yang, Jinlong.
Afiliação
  • Liu S; Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China Hefei Anhui 230026 China lixx@ustc.edu.cn.
  • Xu K; Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, School of Physics and Electronic Engineering, Hubei University of Arts and Science Xiangyang 441053 China xuke@hbuas.edu.cn.
  • Li X; Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China Hefei Anhui 230026 China lixx@ustc.edu.cn.
  • Li Q; Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China Hefei Anhui 230026 China.
  • Yang J; Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China Hefei Anhui 230026 China lixx@ustc.edu.cn.
Chem Sci ; 15(18): 6916-6923, 2024 May 08.
Article em En | MEDLINE | ID: mdl-38725518
ABSTRACT
Two-dimensional (2D) nonmagnetic semiconductors with large Rashba-Dresselhaus (R-D) spin splitting at valence or conduction bands are attractive for magnetic-field-free spintronic applications. However, so far, the number of 2D R-D inorganic semiconductors has been quite limited, and the factors that determine R-D spin splitting as well as rational design of giant spin splitting, remain unclear. For this purpose, by exploiting 2D chiral metal-organic frameworks (CMOFs) as a platform, we theoretically develop a three-step screening method to obtain a series of candidate 2D R-D semiconductors with valence band spin splitting up to 97.2 meV and corresponding R-D coupling constants up to 1.37 eV Å. Interestingly, the valence band spin texture is reversible by flipping the chirality of CMOFs. Furthermore, five keys for obtaining giant R-D spin splitting in 2D CMOFs are successfully identified (i) chirality, (ii) large spin-orbit coupling, (iii) narrow band gap, (iv) valence and conduction bands having the same symmetry at the Γ point, and (v) strong ligand field.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chem Sci Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chem Sci Ano de publicação: 2024 Tipo de documento: Article
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