Electron beam lithography of GeTe through polymorphic phase transformation.
Nanoscale Horiz
; 9(9): 1574-1581, 2024 Aug 19.
Article
em En
| MEDLINE
| ID: mdl-39034818
ABSTRACT
We report two previously undiscovered phases of GeTe including the sphalerite (c-) phase and the hexagonal (h-) phase with interlayer van der Waals gaps. A polymorphic phase transformation from rhombohedral α-GeTe to c- and h-GeTe at near room temperature is first realized via electron beam irradiation. Their underlying thermodynamics and kinetics are illustrated using the in situ heating experiments and molecular dynamics simulations. Density-functional theory calculations indicate that c-GeTe exhibits typical metallic behavior and h-GeTe is a narrow-gap semiconductor with a strong spin-orbital coupling effect. Our findings shed light on a strategy for designing GeTe-based quantum devices compromising nanopillars and heterostructures via an atomic-scale electron beam lithography technique.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale Horiz
/
Nanoscale horiz. (Online)
/
Nanoscale horizons (Online)
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
China