Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor.

Kim, Yijoon; Kim, Hyangwoo; Oh, Kyounghwan; Park, Ju Hong; Kong, Byoung Don; Baek, Chang-Ki

Kim, Yijoon; Kim, Hyangwoo; Oh, Kyounghwan; Park, Ju Hong; Kong, Byoung Don; Baek, Chang-Ki.

Afiliação

Kim Y; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.
Kim H; Future IT Innovation Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea. hyangwookim@postech.ac.kr.
Oh K; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.
Park JH; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.
Kong BD; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.
Baek CK; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.

Discov Nano ; 19(1): 132, 2024 Aug 23.

Article em En | MEDLINE | ID: mdl-39177916

Palavras-chave

Bandgap engineering; Leaky integrate-and-fire (LIF); Spiking neural networks (SNNs); Tunable function

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Discov Nano Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Coréia do Sul

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