ABSTRACT
The conductivity and charge carrier concentration of single GaN nanowires (NWs) doped with different concentrations of Ge were determined by four-point resistivity and temperature-dependent Seebeck coefficient measurements. We observed high carrier concentrations ranging from 9.1 × 10(18) to 5.5 × 10(19) cm(-3), well above the Mott density of 1.6 × 10(18) cm(-3), and conductivities up to 625 S cm(-1) almost independent of the NW diameter. The weak temperature dependence of the conductivity between 2 and 10 K could be assigned to the formation of an impurity band. For the sample with the highest conductivity metallic behaviour was found, indicated by a positive temperature coefficient of the resistivity. The near band edge emission analyzed by micro-photoluminescence spectroscopy showed only a small increase of the peak width up to 70 meV and no spectral shift for carrier concentrations up to 5.5 × 10(19) cm(-3). The latter was attributed to the simultaneous influence of band filling, band gap renormalization, and strain.
ABSTRACT
We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 ± 5)%.
ABSTRACT
Periodic spatial intensity modulations of near-band-gap luminescence light at 3.36 eV photon energy are reported in nanometer-sized resonators of single zinc oxide nanorods. These modulations are observed when the luminescence light, due to excitonic recombination, is excited by a focused low-energy electron beam scanned along the rods. The acceleration energy of only 2 keV allows for a spatial resolution of a few ten nanometers. Numerical calculations based on the theory of dielectric cylindrical waveguides are performed identifying the intensity modulations as beating patterns of coupled TE01 and TM01 modes in the nanoresonator.
ABSTRACT
This article reviews the piezoelectric properties of III-nitrides with emphasis on GaN, InN, and their ternary alloys. After a short literature survey we concentrate on semipolar and nonpolar quantum wells grown on crystal planes other than the commonly used c plane ({0001}). The electrostatic field within a quantum well causes a quantum confined Stark effect and thus lowers the radiative transition probability as well as the transition energy. The basic impact of the quantum confined Stark effect on the optical properties of GaInN/GaN quantum wells is discussed in detail. Some routes to determine the magnitude of the electric field are described, and recent results are considered. The measured values are compared to published piezoelectric tensor elements.