Topological Protection Brought to Light by the Time-Reversal Symmetry Breaking.

Recent topological band theory distinguishes electronic band insulators with respect to various symmetries and topological invariants, most commonly, the time reversal symmetry and the Z_{2} invariant. The interface of two topologically distinct insulators hosts a unique class of electronic states-the helical states, which shortcut the gapped bulk and exhibit spin-momentum locking. The magic and so far elusive property of the helical electrons, known as topological protection, prevents them from coherent backscattering as long as the underlying symmetry is preserved. Here we present an experiment that brings to light the strength of topological protection in one-dimensional helical edge states of a Z_{2} quantum spin-Hall insulator in HgTe. At low temperatures, we observe the dramatic impact of a tiny magnetic field, which results in an exponential increase of the resistance accompanied by giant mesoscopic fluctuations and a gap opening. This textbook Anderson localization scenario emerges only upon the time-reversal symmetry breaking, bringing the first direct evidence of the topological protection strength in helical edge states.

Andreev Reflection in an s-Type Superconductor Proximized 3D Topological Insulator.

We investigate transport and shot noise in lateral normal-metal-3D topological-insulator-superconductor contacts, where the 3D topological insulator (TI) is based on Bi. In the normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor F_{N}≈1/3 in magnetic field and in a reference normal-metal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor F_{AR}≈0.22±0.02 is considerably reduced in the AR regime compared to F_{N}, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.

Local noise in a diffusive conductor.

The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive for the electronic energy distributions and extends primary local measurements towards strongly non-equilibrium regimes.

Filling factor dependence of the fractional quantum Hall effect gap.

We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu=1/3 and nu=2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an ideal 2D electron system, in the highest accessible magnetic fields, is proportional to q(-1) B(1/2).

Direct measurements of fractional quantum Hall effect gaps.

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases linearly with the magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

Counterflow of electrons in two isolated quantum point contacts.

We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the detector QPC is tuned to a transition region between its quantized conductance plateaus and the drive QPC is almost pinched-off. We interpret this counterflow phenomenon in terms of an asymmetric phonon-induced excitation of electrons in the leads of the detector QPC.

Double-dot quantum ratchet driven by an independently biased quantum point contact.

We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunneling we observe a finite current flowing through the Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.

Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon.

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g factor that is close to its value in bulk silicon and does not depend on the filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.

Canted antiferromagnetic phase in a double quantum well in a tilted quantizing magnetic field.

We investigate the double-layer electron system in a parabolic quantum well at filling factor nu=2 in a tilted magnetic field using capacitance spectroscopy. The competition between two ground states is found at the Zeeman splitting appreciably smaller than the symmetric-antisymmetric splitting. Although at the transition point the system breaks up into domains of the two competing states, the activation energy turns out to be finite, signaling the occurrence of a new insulator-insulator quantum phase transition. We interpret the obtained results in terms of a predicted canted antiferromagnetic phase.