Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response.

Piezoresponse force microscopy (PFM) is a robust characterization technique to explore ferroelectric properties at the nanoscale. However, the PFM signal can lead to misinterpretation of results due to the dominant electrostatic interaction between the tip and the sample. In this work, a detailed calibration process is presented and a procedure to identify the parasitic phase offset is demonstrated. To obtain artifact-free phase-amplitude loops, a methodology is developed by combining the outcomes from switching spectroscopy-PFM (SS-PFM) and Kelvin probe force microscopy (KPFM). It is demonstrated that the phase and amplitude loops obtained from SS-PFM at a specific read voltage, ascertained from the surface potential by KPFM, can convey accurate electromechanical information. These methodologies are applied to quantify the imprint voltage in BaTiO3 and BiFeO3, along with vertically aligned BaTiO3:Sm2O3 and BaTiO3:MgO nanocomposites. The variation of the imprint voltage measured under different tip voltages demonstrates the importance of selecting the correct read voltage in determining the local imprint voltage. Additionally, 2D imprint voltage maps in each domain of a BaTiO3 single crystal are obtained using the datacube-PFM technique, which allows pixel-by-pixel determination of artifact-free spatial variation of PFM phase-amplitude response.

Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials.

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.

Emergence of metamagnetic transition, re-entrant cluster glass and spin phonon coupling in Tb2CoMnO6.

The double perovskite compound Tb2CoMnO6has been investigated using x-ray absorption spectroscopy (XAS), Raman spectroscopy, magnetic measurements andab initioband structure calculations. It is observed that both anti-ferromagnetic (AFM) and ferromagnetic (FM) phase coexist in this material. The presence of anti-site disorder (ASD) has been established from the analysis of neutron diffraction data. Moreover, a prominent metamagnetic transition is observed in theM(H) behavior that has been explained with the drastic reorientation of the pinned domain which are aligned antiparallel by the antiphase boundaries (APBs) at zero field. The ASD further gives rise to spin frustration at low temperature which leads to the re-entrant cluster glass ∼33 K. The coupling between phononic degree of freedom and spin in the system has also been demonstrated. It is observed that the theoretical calculation is consistent with that of the experimentally observed behavior.

Competition and coexistence of polar and non-polar states in Sr1-x Ca x TiO3: an investigation using pressure dependent Raman spectroscopy.

The competition and cooperation between ferroelectric and anti-ferro-distortion (AFD) instabilities are studied using pressure dependent Raman spectroscopy on polycrystalline powder samples of Sr1-x Ca x TiO3(x = 0.0, 0.06, 0.25, 0.35). For x = 0.0 composition, a broad polar mode is detected in the Raman spectra above 6 GPa, while for x = 0.06 composition, the polar modes appear well above 9 GPa where the AFD modes showed strong suppression. In x = 0.25 and 0.35 composition, the application of small pressure resulted in the appearance of strong AFD modes suppressing the polar modes. At elevated pressures, re-entrant polar modes are observed along with the broad AFD modes and some new peaks are also observed, signifying the lowering of local symmetry. The reappearance of polar modes is found to be related to pressure induced symmetry disorder at local level, suggesting its electronic origin. The re-entrant polar modes observed at higher pressure values are found to be significantly broad and asymmetric in nature, signifying the development of ferroelectric micro regions/nano domains coexisting with AFD. The lower symmetry at local length scale provides a conducive atmosphere for coexisting AFD and FE instabilities.