Perovskite Light-Emitting Diode Display Based on MoS2 Backplane Thin-Film Transistors.

The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS2 )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas. PeLEDs are integrated with MoS2 TFTs to fabricate an active-matrix PeLED display with an 8 × 8 array, which exhibits excellent brightness control capability and high switching speed. This study demonstrates the potential of PeLEDs as candidates for next-generation displays and presents a novel approach for fabricating optoelectronic devices via the heterogeneous integration of 2D materials and perovskites, thereby paving the way toward the fabrication of practical future optoelectronic systems.

CsPbBr3 and Cs4PbBr6 perovskite light-emitting diodes using a thermally evaporated host-dopant system.

This article shows the results of fabricating a device through vacuum deposition by synthesizing a perovskite thin film in the powder form. Light emitting diodes (LEDs) were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr3 and Cs4PbBr6 used in the host-dopant system were green, and the host was tris(8-quinolinolato) aluminum(III). It is confirmed that the display efficiency and optical characteristics are significantly improved by the dopant ratio. The 3%-doped CsPbBr3 based LED shows a luminance of 9083 cd m-2, 3.36% external quantum efficiency (EQE), and 96% photoluminescence quantum yield (PLQY) efficiency (for the undoped CsPbBr3 LED, luminance: 844 cd m-2/EQE: 1.93%/PLQY: 85%). The LED based on 5%-doped Cs4PbBr6 shows a luminance of 11 440 cd m-2, an EQE of 6.27%, and 99% PLQY efficiency (for the undoped Cs4PbBr6 LED, luminance:1113 cd m-2/EQE: 1.64%/PLQY: 93%). It is expected that the results of this research will contribute to the perovskite LED research performed by thermal evaporation in the future.

Tailoring the Structure of Low-Dimensional Halide Perovskite through a Room Temperature Solution Process: Role of Ligands.

In this study, halide perovskite nanocrystals are synthesized by controlling the ligand length and amount, and investigated the effects on the change in the ligand length and amount on the shape, size, crystal structure, and optical properties of the perovskite nanocrystals. The results reveal the tendency and respective effects of amine and acid ligands on perovskite nanocrystals. The amine ligands bind directly to the perovskite nanocrystals. Consequently, the amine ligands with longer chains interfere with the aggregation of the initially formed nanocrystals, thus limiting the size of the halide perovskite nanocrystals. Similar to the amine ligands, the acid ligands directly bond with the perovskite nanocrystals; however, they are also indirectly distributed around the nanocrystals, thus affecting their structure and dispersion. Consequently, the acid ligands affect the assembly of the initially formed nanocrystals, which determine the shape and crystal structure of the nanocrystals. It is believed that the report will provide useful insight on the synthesis of halide perovskites for application in optoelectronic devices.

Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS2 backplane.

Electronic applications are continuously developing and taking new forms. Foldable, rollable, and wearable displays are applicable for human health care monitoring or robotics, and their operation relies on organic light-emitting diodes (OLEDs). Yet, the development of semiconducting materials with high mechanical flexibility has remained a challenge and restricted their use in unusual format electronics. This study presents a wearable full-color OLED display using a two-dimensional (2D) material-based backplane transistor. The 18-by-18 thin-film transistor array was fabricated on a thin MoS2 film that was transferred to Al2O3 (30 nm)/polyethylene terephthalate (6 µm). Red, green, and blue OLED pixels were deposited on the device surface. This 2D material offered excellent mechanical and electrical properties and proved to be capable of driving circuits for the control of OLED pixels. The ultrathin device substrate allowed for integration of the display on an unusual substrate, namely, a human hand.

Recent Advances in TiO2-Based Photocatalysts for Reduction of CO2 to Fuels.

Titanium dioxide (TiO2) has attracted increasing attention as a candidate for the photocatalytic reduction of carbon dioxide (CO2) to convert anthropogenic CO2 gas into fuels combined with storage of intermittent and renewable solar energy in forms of chemical bonds for closing the carbon cycle. However, pristine TiO2 possesses a large band gap (3.2 eV), fast recombination of electrons and holes, and low selectivity for the photoreduction of CO2. Recently, considerable progress has been made in the improvement of the performance of TiO2 photocatalysts for CO2 reduction. In this review, we first discuss the fundamentals of and challenges in CO2 photoreduction on TiO2-based catalysts. Next, the recently emerging progress and advances in TiO2 nanostructured and hybrid materials for overcoming the mentioned obstacles to achieve high light-harvesting capability, improved adsorption and activation of CO2, excellent photocatalytic activity, the ability to impede the recombination of electrons-holes pairs, and efficient suppression of hydrogen evolution are discussed. In addition, approaches and strategies for improvements in TiO2-based photocatalysts and their working mechanisms are thoroughly summarized and analyzed. Lastly, the current challenges and prospects of CO2 photocatalytic reactions on TiO2-based catalysts are also presented.

Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor.

Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.