RESUMO
Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.
RESUMO
We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a FeII SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule. Experimental results are supported by density functional theory (DFT) with nonequilibrium Green's function (NEGF) calculations and a generic theoretical model. While the DFT+NEGF calculations reproduce NDR for a special atomically sharp STM tip, the effect is attributed to the energy-dependent tip density of states rather than the molecule itself. We, therefore, propose a Coulomb blockade model involving three molecular orbitals with very different spatial localization as suggested by the molecular electronic structure.
RESUMO
Bistable spin-crossover molecules are particularly interesting for the development of innovative electronic and spintronic devices as they present two spin states that can be controlled by external stimuli. In this paper, we report the voltage-induced switching of the high spin/low spin electronic states of spin-crossover molecules self-assembled in dense 2D networks on Au(111) and Cu(111) by scanning tunneling microscopy at low temperature. On Au(111), voltage pulses lead to the nonlocal switching of the molecules from anyâhigh or lowâspin state to the other followed by a spontaneous relaxation toward their initial state within minutes. On the other hand, on Cu(111), single molecules can be addressed at will. They retain their new electronic configuration after a voltage pulse. The memory effect demonstrated on Cu(111) is due to an interplay between long-range intermolecular interaction and molecule/substrate coupling as confirmed by mechanoelastic simulations.
RESUMO
Magnetic skyrmions are deemed to be the forerunners of novel spintronic memory and logic devices. While their observation and their current-driven motion at room temperature have been demonstrated, certain issues regarding their nucleation, stability, pinning, and skyrmion Hall effect still need to be overcome to realize functional devices. Here, we demonstrate that focused He+-ion-irradiation can be used to create and guide skyrmions in racetracks. We show that the reduction of the perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in the track defined by ion-irradiation leads to the formation of stable isolated skyrmions. Current-driven skyrmion motion experiments and simulations reveal that the skyrmions move along the irradiated track, resulting in the suppression of the skyrmion Hall effect, and that the maximum skyrmion velocity can be enhanced by tuning the magnetic properties. These results open up a new path to nucleate and guide magnetic skyrmions in racetrack devices.
RESUMO
The coupling of diverse degrees of freedom opens the door to physical effects that go beyond each of them individually, making multifunctionality a much sought-after attribute for high-performance devices. Here, the multifunctional operation of a single-layer p-type organic device, displaying both spin transport and photovoltaic effect at the room temperature on a transparent substrate, is shown. The generated photovoltage is almost three times larger than the applied bias to the device which facilitates the modulation of the magnetic response of the device with both bias and light. The device shows an increase in power conversion efficiency under magnetic field, an ability to invert the current with magnetic field and under certain conditions it can act as a spin photodetector with zero power consumption in the standby mode. The room-temperature exploitation of the interplay among light, bias, and magnetic field in the single device with a p-type molecule opens a way toward the development of efficient high-performance spin photovoltaic cells.
RESUMO
Spin cross-over molecules show the unique ability to switch between two spin states when submitted to external stimuli such as temperature, light or voltage. If controlled at the molecular scale, such switches would be of great interest for the development of genuine molecular devices in spintronics, sensing and for nanomechanics. Unfortunately, up to now, little is known on the behaviour of spin cross-over molecules organized in two dimensions and their ability to show cooperative transformation. Here we demonstrate that a combination of scanning tunnelling microscopy measurements and ab initio calculations allows discriminating unambiguously between both states by local vibrational spectroscopy. We also show that a single layer of spin cross-over molecules in contact with a metallic surface displays light-induced collective processes between two ordered mixed spin-state phases with two distinct timescale dynamics. These results open a way to molecular scale control of two-dimensional spin cross-over layers.