Surfactant gel-based method: A universal soft method for the exfoliation of 2D materials.

HYPOTHESIS: Fluidic micelles and reverse micelles have served as exfoliation mediums. However, an additional force, such as extended sonication, is required. Gelatinous cylindrical micelles that are formed once desired conditions are achieved can be an ideal medium for the quick exfoliation of 2D materials without the need for any external force. The quick formation of gelatinous cylindrical micelles can rip off layers from the 2D materials suspended in the mixture leading to the quick exfoliation of 2D materials. EXPERIMENTS: Herein, we introduce a quick universal method capable of delivering high-quality exfoliated 2D materials cost-effectively using CTAB-based gelatinous micelles as an exfoliation medium. The approach is devoid of harsh treatment, such as prolonged sonication and heating, and a quick exfoliation of 2D materials is completed using this approach. FINDINGS: We successfully exfoliated four 2D materials (MoS2, Graphene, WS2, and BN) and investigated their morphology, chemical, and crystal structure along with optical and electrochemical properties to probe the quality of the exfoliated product. Results revealed that the proposed method is highly efficient in exfoliating 2D materials in a quick time without causing any significant damage to the mechanical integrity of the exfoliated materials.

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study.

Alteration of transport properties of any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role in controlling the resistive switching (RS) performance of metal oxide-based memory devices. Therefore, a judicious choice of dopants and their atomic concentrations is crucial for achieving an optimum Vo configuration. Here, we show that the rational designing of RS memory devices with cationic dopants (Ta), in particular, Au/Ti1-xTaxO2-δ/Pt devices, is promising for the upcoming non-volatile memory technology. Indeed, a current window of ∼104 is realized at an ultralow voltage as low as 0.25 V with significant retention (∼104 s) and endurance (∼105 cycles) of the device by considering 1.11 at % Ta doping. The obtained device parameters are compared with those in the available literature to establish its excellent performance. Furthermore, using detailed experimental analyses and density functional theory (DFT)-based first-principles calculations, we comprehend that the meticulous presence of Vo configurations and the columnar-like dendritic structures is crucial for achieving ultralow-voltage bipolar RS characteristics. In fact, the dopant-mediated Vo interactions are found to be responsible for the enhancement in local current conduction, as evidenced from the DFT-simulated electron localization function plots, and these, in turn, augment the device performance. Overall, the present study on cationic-dopant-controlled defect engineering could pave a neoteric direction for future energy-efficient oxide memristors.

Single-step grown boron doped nanocrystalline diamond-carbon nanograss hybrid as an efficient supercapacitor electrode.

Direct synthesis of a nano-structured carbon hybrid consisting of vertically aligned carbon nanograsses on top of boron-doped nanocrystalline diamond is demonstrated and the carbon hybrid is further applied as an electrode material for the fabrication of supercapacitors. The hybrid film combines the dual advantages of sp2 (carbon nanograss) and sp3 (nanocrystalline diamond) bonded carbon, possessing not only the excellent electrical characteristics of sp2 carbon but also the exceptional electrochemical stability of sp3 carbon. As a result, the specific capacitance of the as-prepared hybrid material reaches up to 0.4 F cm-2, one of the highest reported in diamond-based supercapacitors. The entire electrochemical results exhibit enhanced electron transfer efficiency with remarkable stability of 95% of capacitance retention even after 10 000 cycles.

Effective Utilization of Waste Red Mud for High Performance Supercapacitor Electrodes.

In recent years, metal oxide-based, inexpensive, stable electrodes are being explored as a potent source of high performance, sustainable supercapacitors. Here, the employment of industrial waste red mud as a pseudocapacitive electrode material is reported. Mechanical milling is used to produce uniform red mud nanoparticles, which are rich in hematite (Fe2O3), and lower amounts of other metal oxides. A comprehensive supercapacitive study of the electrode is presented as a function of ball-milling time up to 15 h. Ten-hour ball-milled samples exhibit the highest pseudocapacitive behavior with a specific capacitance value of ≈317 F g-1, at a scan rate of 10 mV s-1 in 6 m aqueous potassium hydroxide electrolyte solution. The modified electrode shows an extraordinary retention of ≈97% after 5000 cycles. A detailed quantitative electrochemical analysis is carried out to understand the charge storage mechanism at the electrode-electrolyte interface. The formation of uniform nanoparticles and increased electrode stability are correlated with the high performance. This work presents two significant benefits for the environment; in energy storage, it shows the production of a stable and efficient supercapacitor electrode, and in waste management with new applications for the treatment of red mud.