RESUMO
A cost-efficient and low-complexity optical input/output (I/O) packaging solution is a substantial challenge for volume production of photonic integrated circuits. To address this, metamaterial fiber couplers are an attractive solution for integrated photonic devices especially for optical I/O, interfacing standard optical fibers to photonic chips. They offer the advantages of refractive index engineering to achieve better mode match as well as higher fabrication tolerances. Metamaterial waveguides, as a fundamental building block of these fiber couplers, have attracted tremendous attention in recent years. Here, we report on effective optical return loss control in Si metamaterial waveguide designs to achieve ultra-low reflection loss in CMOS-compatible silicon photonics implemented in a 300 mm production line. Low backscattering is a substantial consideration for a range of applications. Here, a return loss of better than -30dB is achieved.
RESUMO
Backscattering in integrated photonic waveguides can significantly impact the performance of optical systems. However, it has not been extensively studied in the literature and measurements on waveguides fabricated in production foundry processes are particularly lacking in view of their importance to technology. Here we experimentally measure and analyze distributed backscattering in various production O-band silicon photonic waveguides. We find the measured backscattering to scale from -18 to -36 dB/mm. Measured trends across waveguide geometry and polarization are consistent with stochastic defects on waveguide sidewalls being the dominant source of distributed backscattering in production Si waveguides. For production SiNx waveguides, both sidewall and cladding defects need to be considered to fit measured trends.
RESUMO
We propose a coupling-modulated microring in an add-drop configuration for binary phase-shift keying (BPSK), where data is encoded as 0 and π radian phase-shifts on the optical carrier. The device uses the π radian phase-flip across the zero coupling point in a 2 × 2 Mach-Zehnder interferometer coupler to produce the modulation. The coupling-modulated microring combines the drive power reduction of resonant modulators with the digital phase response of Mach-Zehnder BPSK modulators. A proof-of-concept device was demonstrated in silicon-on-insulator, showing differential binary phase-shift keying operation at 5 and 10 Gb/s.
RESUMO
We demonstrate novel polarization management devices in a custom-designed silicon nitride (Si(3)N(4)) on silicon-on-insulator (SOI) integrated photonics platform. In the platform, Si(3)N(4) waveguides are defined atop silicon waveguides. A broadband polarization rotator-splitter using a TM0-TE1 mode converter in a composite Si(3)N(4)-silicon waveguide is demonstrated. The polarization crosstalk, insertion loss, and polarization dependent loss are less than -19 dB, 1.5 dB, and 1.0 dB, respectively, over a bandwidth of 80 nm. A polarization controller composed of polarization rotator-splitters, multimode interference couplers, and thin film heaters is also demonstrated.
RESUMO
We demonstrate various silicon-on-insulator polarization management structures based on a polarization rotator-splitter that uses a bi-level taper TM0-TE1 mode converter. The designs are fully compatible with standard active silicon photonics platforms with no new levels required and were implemented in the IME baseline and IME-OpSIS silicon photonics processes. We demonstrate a polarization rotator-splitter with polarization crosstalk < -13 dB over a bandwidth of 50 nm. Then, we improve the crosstalk to < -22 dB over a bandwidth of 80 nm by integrating the polarization rotator-splitter with directional coupler polarization filters. Finally, we demonstrate a polarization controller by integrating the polarization rotator-splitters with directional couplers, thermal tuners, and PIN diode phase shifters.
RESUMO
We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a V(π)âL figure of merit of 0.12Vâmm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.
Assuntos
Interferometria/instrumentação , Semicondutores , Telecomunicações/instrumentação , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
We report the observation of photocurrent in silicon nanowires induced by nonradiative resonant energy transfer (NRET) from adjacent layers of lead sulfide nanocrystal quantum dots using time-resolved photocurrent measurements. This demonstration supports the feasibility of a new solar cell paradigm (Lu, S.; Madhukar, A. Nano Lett. 2007, 7, 3443-3451) that exploits NRET between efficient photon absorbers and adjacent nanowire/quantum well high-mobility charge transport channels and could offer a viable alternative to the limitations of carrier transport and collection faced by excitonic solar cells.
Assuntos
Cristalização/métodos , Eletroquímica/métodos , Nanoestruturas/química , Nanotecnologia/métodos , Fotoquímica/métodos , Pontos Quânticos , Silício/química , Condutividade Elétrica , Fontes de Energia Elétrica , Campos Eletromagnéticos , Transferência de Energia , Luz , Substâncias Macromoleculares/química , Teste de Materiais , Conformação Molecular , Nanoestruturas/efeitos da radiação , Nanoestruturas/ultraestrutura , Tamanho da Partícula , Energia Solar , Propriedades de SuperfícieRESUMO
We propose and demonstrate a multistage design for microphotonic add-drop filters that provides reduced drop-port loss and relaxed tolerances for achieving high in-band extinction. As a result, the first microring-resonator filters with a rectangular notch stopband in the through port (to our knowledge) are shown, with extinctions exceeding 50 dB. Reaching 30 dB beyond previous results, without postfabrication trimming, such extinction levels open the door to microphotonic notch circuits for spectroscopy, wavelength conversion, and quantum cryptography applications. Combined with a low-loss, high-index-contrast electromagnetic design in SiN and frequency-matched microring resonators, this approach led to the first demonstration of flattop microphotonic filters meeting the stringent criteria for high-spectral-efficiency integrated add-drop multiplexers. The 40 GHz wide filters show a 20 nm free spectral range, 2 dB drop loss, and suppression of adjacent channels by over 30 dB.
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Evanescent field perturbation of an integrated microring resonator is examined as a means of achieving high-fidelity reversible tuning of photonic microcavities over large wavelength ranges. A 1.7% wavelength tuning is achieved through the use of a novel silica fiber probe that provides access to the evanescent field of an air-clad high-index-contrast ring resonator. As the microring is perturbed, the probe-ring distance is found through simultaneous nanometric distance calibration and force measurements. Experimental results agree well with theoretical tuning. Possible microelectromechanical systems implementation of this effect is discussed, as well as avenues for improvement of the tuning range.
RESUMO
Third-order add-drop filters based on series-coupled microring resonators were fabricated in silicon-rich silicon nitride with accurate dimensional control and negligible sidewall roughness. For the first time, a low 3 dB drop loss is demonstrated with a wide 24 nm free-spectral-range in a high-order microring filter without using the Vernier effect. The spectral response is matched by rigorous numerical simulation, and non-idealities in the drop- and through-port responses are shown to be of design origin and to be correctable.