RESUMO
The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10-3 and 2.3 × 10-5 cm2 V-1 s-1, respectively. At higher temperatures performance decreases limited by percolation pathways between the enlarged crystals.
RESUMO
The asymmetric n-type Ph-BTBT-C10 derivative 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene S,S,S',S'-tetraoxide is structurally investigated in the thin film regime. After film preparation by spin coating and physical vapor deposition, a rather disordered structure is observed, with a strong change of its internal degree of order upon heating. At 95 °C, a transition into a layered structure of upright standing molecules without any in-plane order appears, and at 135 °C, crystallization takes place. This phase information is combined with surface morphological studies and charge carrier mobility measurements to describe the structure and thin film transistor applicability of this molecule.