Is Ba3In2O6a high-Tcsuperconductor?

It has been suggested that Ba3In2O6might be a high-Tcsuperconductor. Experimental investigation of the properties of Ba3In2O6was long inhibited by its instability in air. Recently epitaxial Ba3In2O6with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba3In2O6is determined to be 2.99 eV in-the (001) plane and 2.83 eV along thec-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. NeitherA- norB-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba3In2O6was successfully grown epitaxially on an epitaxial SrRuO3bottom electrode. So far none of these efforts induced superconductivity in Ba3In2O6,leaving the answer to the initial question of whether Ba3In2O6is a high-Tcsuperconductor to be 'no' thus far.

Single-photon detection using high-temperature superconductors.

The detection of individual quanta of light is important for quantum communication, fluorescence lifetime imaging, remote sensing and more. Due to their high detection efficiency, exceptional signal-to-noise ratio and fast recovery times, superconducting-nanowire single-photon detectors (SNSPDs) have become a critical component in these applications. However, the operation of conventional SNSPDs requires costly cryocoolers. Here we report the fabrication of two types of high-temperature superconducting nanowires. We observe linear scaling of the photon count rate on the radiation power at the telecommunications wavelength of 1.5 µm and thereby reveal single-photon operation. SNSPDs made from thin flakes of Bi2Sr2CaCu2O8+δ exhibit a single-photon response up to 25 K, and for SNSPDs from La1.55Sr0.45CuO4/La2CuO4 bilayer films, this response is observed up to 8 K. While the underlying detection mechanism is not fully understood yet, our work expands the family of materials for SNSPD technology beyond the liquid helium temperature limit and suggests that even higher operation temperatures may be reached using other high-temperature superconductors.

Scale-invariant magnetoresistance in a cuprate superconductor.

The anomalous metallic state in the high-temperature superconducting cuprates is masked by superconductivity near a quantum critical point. Applying high magnetic fields to suppress superconductivity has enabled detailed studies of the normal state, yet the direct effect of strong magnetic fields on the metallic state is poorly understood. We report the high-field magnetoresistance of thin-film La2-x Sr x CuO4 cuprate in the vicinity of the critical doping, 0.161 ≤ p ≤ 0.190. We find that the metallic state exposed by suppressing superconductivity is characterized by magnetoresistance that is linear in magnetic fields up to 80 tesla. The magnitude of the linear-in-field resistivity mirrors the magnitude and doping evolution of the well-known linear-in-temperature resistivity that has been associated with quantum criticality in high-temperature superconductors.

Spontaneous breaking of rotational symmetry in copper oxide superconductors.

The origin of high-temperature superconductivity in copper oxides and the nature of the 'normal' state above the critical temperature are widely debated. In underdoped copper oxides, this normal state hosts a pseudogap and other anomalous features; and in the overdoped materials, the standard Bardeen-Cooper-Schrieffer description fails, challenging the idea that the normal state is a simple Fermi liquid. To investigate these questions, we have studied the behaviour of single-crystal La2-xSrxCuO4 films through which an electrical current is being passed. Here we report that a spontaneous voltage develops across the sample, transverse (orthogonal) to the electrical current. The dependence of this voltage on probe current, temperature, in-plane device orientation and doping shows that this behaviour is intrinsic, substantial, robust and present over a broad range of temperature and doping. If the current direction is rotated in-plane by an angle ϕ, the transverse voltage oscillates as sin(2ϕ), breaking the four-fold rotational symmetry of the crystal. The amplitude of the oscillations is strongly peaked near the critical temperature for superconductivity and decreases with increasing doping. We find that these phenomena are manifestations of unexpected in-plane anisotropy in the electronic transport. The films are very thin and epitaxially constrained to be tetragonal (that is, with four-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every ϕ. The origin of this anisotropy is purely electronic-the so-called electronic nematicity. Unusually, the nematic director is not aligned with the crystal axes, unless a substantial orthorhombic distortion is imposed. The fact that this anisotropy occurs in a material that exhibits high-temperature superconductivity may not be a coincidence.

Dependence of the critical temperature in overdoped copper oxides on superfluid density.

The physics of underdoped copper oxide superconductors, including the pseudogap, spin and charge ordering and their relation to superconductivity, is intensely debated. The overdoped copper oxides are perceived as simpler, with strongly correlated fermion physics evolving smoothly into the conventional Bardeen-Cooper-Schrieffer behaviour. Pioneering studies on a few overdoped samples indicated that the superfluid density was much lower than expected, but this was attributed to pair-breaking, disorder and phase separation. Here we report the way in which the magnetic penetration depth and the phase stiffness depend on temperature and doping by investigating the entire overdoped side of the La2-xSrxCuO4 phase diagram. We measured the absolute values of the magnetic penetration depth and the phase stiffness to an accuracy of one per cent in thousands of samples; the large statistics reveal clear trends and intrinsic properties. The films are homogeneous; variations in the critical superconducting temperature within a film are very small (less than one kelvin). At every level of doping the phase stiffness decreases linearly with temperature. The dependence of the zero-temperature phase stiffness on the critical superconducting temperature is generally linear, but with an offset; however, close to the origin this dependence becomes parabolic. This scaling law is incompatible with the standard Bardeen-Cooper-Schrieffer description.

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films.

Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

Anomalous independence of interface superconductivity from carrier density.

The recent discovery of superconductivity at the interface of two non-superconducting materials has received much attention. In cuprate bilayers, the critical temperature (Tc) can be significantly enhanced compared with single-phase samples. Several explanations have been proposed, invoking Sr interdiffusion, accumulation and depletion of mobile charge carriers, elongation of the copper-to-apical-oxygen bond length, or a beneficial crosstalk between a material with a high pairing energy and another with a large phase stiffness. From each of these models, one would predict Tc to depend strongly on the carrier density in the constituent materials. Here, we study combinatorial libraries of La(2-x)Sr(x)CuO4-La2CuO4 bilayer samples--an unprecedentedly large set of more than 800 different compositions. The doping level x spans a wide range, 0.15 < x < 0.47, and the measured Hall coefficient varies by one order of magnitude. Nevertheless, across the entire sample set, Tc stays essentially constant at about 40 K. We infer that doping up to the optimum level does not shift the chemical potential, unlike in ordinary Fermi liquids. This result poses a new challenge to theory--cuprate superconductors have not run out of surprises.

Emergence of superconductivity from the dynamically heterogeneous insulating state in La(2-x)Sr(x)CuO4.

A central issue for copper oxides is the nature of the insulating ground state at low carrier densities and the emergence of high-temperature superconductivity from that state with doping. Even though this superconductor-insulator transition (SIT) is a zero-temperature transition, measurements are not usually carried out at low temperatures. Here we use magnetoresistance to probe both the insulating state at very low temperatures and the presence of superconducting fluctuations in La(2-x)Sr(x)CuO(4) films, for doping levels that range from the insulator to the superconductor (x = 0.03-0.08). We observe that the charge glass behaviour, characteristic of the insulating state, is suppressed with doping, but it coexists with superconducting fluctuations that emerge already on the insulating side of the SIT. The unexpected quenching of the superconducting fluctuations by the competing charge order at low temperatures provides a new perspective on the mechanism for the SIT.

Insights from the study of high-temperature interface superconductivity.

A brief overview is given of the studies of high-temperature interface superconductivity based on atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). A number of difficult materials science and physics questions have been tackled, frequently at the expense of some technical tour de force, and sometimes even by introducing new techniques. ALL-MBE is especially suitable to address questions related to surface and interface physics. Using this technique, it has been demonstrated that high-temperature superconductivity can occur in a single copper oxide layer-the thinnest superconductor known. It has been shown that interface superconductivity in cuprates is a genuine electronic effect-it arises from charge transfer (electron depletion and accumulation) across the interface driven by the difference in chemical potentials rather than from cation diffusion and mixing. We have also understood the nature of the superconductor-insulator phase transition as a function of doping. However, a few important questions, such as the mechanism of interfacial enhancement of the critical temperature, are still outstanding.

Superconductor-insulator transition in La2 - xSrxCuO4 at the pair quantum resistance.

High-temperature superconductivity in copper oxides arises when a parent insulator compound is doped beyond some critical concentration; what exactly happens at this superconductor-insulator transition is a key open question. The cleanest approach is to tune the carrier density using the electric field effect; for example, it was learned in this way that weak electron localization transforms superconducting SrTiO(3) into a Fermi-glass insulator. But in the copper oxides this has been a long-standing technical challenge, because perfect ultrathin films and huge local fields (>10(9) V m(-1)) are needed. Recently, such fields have been obtained using electrolytes or ionic liquids in the electric double-layer transistor configuration. Here we report synthesis of epitaxial films of La(2- x)Sr(x)CuO(4) that are one unit cell thick, and fabrication of double-layer transistors. Very large fields and induced changes in surface carrier density enable shifts in the critical temperature by up to 30 K. Hundreds of resistance versus temperature and carrier density curves were recorded and shown to collapse onto a single function, as predicted for a two-dimensional superconductor-insulator transition. The observed critical resistance is precisely the quantum resistance for pairs, R(Q) = h/(2e) = 6.45 kΩ, suggestive of a phase transition driven by quantum phase fluctuations, and Cooper pair (de)localization.

Determination of the superconductor-insulator phase diagram for one-dimensional wires.

We establish the superconductor-insulator phase diagram for quasi-one-dimensional wires by measuring a large set of MoGe nanowires. This diagram is roughly consistent with the Chakravarty-Schmid-Bulgadaev phase boundary, namely, with the critical resistance being equal to RQ=h/4e2. Deviations from this boundary for a small fraction of the samples prompt us to suggest an alternative phase diagram, which matches the data exactly. Transport properties of wires in the superconducting phase are dominated by phase slips, whereas insulating nanowires exhibit a weak Coulomb blockade behavior.

High-temperature interface superconductivity between metallic and insulating copper oxides.

The realization of high-transition-temperature (high-T(c)) superconductivity confined to nanometre-sized interfaces has been a long-standing goal because of potential applications and the opportunity to study quantum phenomena in reduced dimensions. This has been, however, a challenging target: in conventional metals, the high electron density restricts interface effects (such as carrier depletion or accumulation) to a region much narrower than the coherence length, which is the scale necessary for superconductivity to occur. By contrast, in copper oxides the carrier density is low whereas T(c) is high and the coherence length very short, which provides an opportunity-but at a price: the interface must be atomically perfect. Here we report superconductivity in bilayers consisting of an insulator (La(2)CuO(4)) and a metal (La(1.55)Sr(0.45)CuO(4)), neither of which is superconducting in isolation. In these bilayers, T(c) is either approximately 15 K or approximately 30 K, depending on the layering sequence. This highly robust phenomenon is confined within 2-3 nm of the interface. If such a bilayer is exposed to ozone, T(c) exceeds 50 K, and this enhanced superconductivity is also shown to originate from an interface layer about 1-2 unit cells thick. Enhancement of T(c) in bilayer systems was observed previously but the essential role of the interface was not recognized at the time.

Combinatorial measurements of Hall effect and resistivity in oxide films.

A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect.

Magnetic-field enhancement of superconductivity in ultranarrow wires.

We study the effect of an applied magnetic field on sub-10-nm wide MoGe and Nb superconducting wires. We find that magnetic fields can enhance the critical supercurrent at low temperatures, and do so more strongly for narrower wires. We conjecture that magnetic moments are present, but their pair-breaking effect, active at lower magnetic fields, is suppressed by higher fields. The corresponding microscopic theory, which we have developed, quantitatively explains all experimental observations, and suggests that magnetic moments have formed on the wire surfaces.

Influence of high magnetic fields on the superconducting transition of one-dimensional Nb and MoGe nanowires.

The effects of a strong magnetic field on superconducting Nb and MoGe nanowires with diameter approximately 10 nm have been studied. We have found that the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory of thermally activated phase slips is applicable in a wide range of magnetic fields and describes well the temperature dependence of the wire resistance, over 11 orders of magnitude. The field dependence of the critical temperature, T(c), extracted from the LAMH fits is in good quantitative agreement with the theory of pair-breaking perturbations that takes into account both spin and orbital contributions. The extracted spin-orbit scattering time agrees with an estimate tau(s.o.) approximately tau(variant Planck's over 2pic/Ze(2))(4), where tau is the elastic scattering time and Z is the atomic number.