Superconducting imprint of magnetic textures in ferromagnets with perpendicular magnetic anisotropy.

Research on proximity effects in superconductor/ferromagnetic hybrids has most often focused on how superconducting properties are affected-and can be controlled-by the effects of the ferromagnet's exchange or magnetic fringe fields. The opposite, namely the possibility to craft, tailor and stabilize the magnetic texture in a ferromagnet by exploiting superconducting effects, has been more seldom explored. Here we show that the magnetic flux trapped in high-temperature superconducting YBa2Cu3O7-δ microstructures can be used to modify the magnetic reversal of a hard ferromagnet-a cobalt/platinum multilayer with perpendicular magnetic anisotropy-and to imprint unusual magnetic domain distributions in a controlled manner via the magnetic field history. The domain distributions imprinted in the superconducting state remain stable, in absence of an external magnetic field, even after increasing the temperature well above the superconducting critical temperature, at variance to what has been observed for soft ferromagnets with in-plane magnetic anisotropy. This opens the possibility of having non-trivial magnetic configuration textures at room temperature after being tailored below the superconducting transition temperature. The observed effects are well explained by micromagnetic simulations that demonstrate the role played by the magnetic field from the superconductor on the nucleation, propagation, and stabilization of magnetic domains.

Quasiparticle tunnel electroresistance in superconducting junctions.

The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme-a direct contact between a metal and an oxide-through a different mechanism: a reversible redox reaction that modifies the oxide's ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices.

Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

Multiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

Phthalocyanine based molecular spintronic devices.

Molecular spintronics is an effervescent field of research, which aims at combining spin physics and molecular nano-objects. In this article, we show that phthalocyanine molecules integrated in magnetic tunnel junctions (MTJs) can lead to magnetoresistance effects of different origins. We have investigated cobalt and manganese phthalocyanine molecule based magnetic tunnel junctions. CoPc MTJs exhibit both tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) effects of similar magnitude. However, for MnPc MTJs, a giant TAMR dominates with ratios up to ten thousands of percent. Strong features visible in the conductance suggest that spin-flip inelastic electron tunneling processes occur through the Mn atomic chain formed by the MnPc stacks. These results show that metallo-organic molecules could be used as a template to connect magnetic atomic chains or even a single magnetic atom in a solid-state device.

Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmions at room temperature.

Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films in which the cobalt layer is sandwiched between two heavy metals and so provides additive interfacial Dzyaloshinskii-Moriya interactions (DMIs), which reach a value close to 2 mJ m(-2) in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning X-ray transmission microscopy technique, we imaged small magnetic domains at very low fields in these multilayers. The study of their behaviour in a perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large DMI. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in the near future.

Proximity Driven Commensurate Pinning in YBa2Cu3O7 through All-Oxide Magnetic Nanostructures.

The design of artificial vortex pinning landscapes is a major goal toward large scale applications of cuprate superconductors. Although disordered nanometric inclusions have shown to modify their vortex phase diagram and to produce enhancements of the critical current ( MacManus-Driscoll , J. L. ; Foltyn , S. R. ; Jia , Q. X. ; Wang , H. ; Serquis , A. ; Civale , L. ; Maiorov , B. ; Hawley , M. E. ; Maley , M. P. ; Peterson , D. E. Nat. Mater. 2004 , 3 , 439 - 443 and Yamada , Y. ; Takahashi , K. ; Kobayashi , H. ; Konishi , M. ; Watanabe , T. ; Ibi , A. ; Muroga , T. ; Miyata , S. ; Kato , T. ; Hirayama , T. ; Shiohara , Y. Appl. Phys. Lett. 2005 , 87 , 1 - 3 ), the effect of ordered oxide nanostructures remains essentially unexplored. This is due to the very small nanostructure size imposed by the short coherence length, and to the technological difficulties in the nanofabrication process. Yet, the novel phenomena occurring at oxide interfaces open a wide spectrum of technological opportunities to interplay with the superconductivity in cuprates. Here, we show that the unusual long-range suppression of the superconductivity occurring at the interface between manganites and cuprates affects vortex nucleation and provides a novel vortex pinning mechanism. In particular, we show evidence of commensurate pinning in YBCO films with ordered arrays of LCMO ferromagnetic nanodots. Vortex pinning results from the proximity induced reduction of the condensation energy at the vicinity of the magnetic nanodots, and yields an enhanced friction between the nanodot array and the moving vortex lattice in the liquid phase. This result shows that all-oxide ordered nanostructures constitute a powerful, new route for the artificial manipulation of vortex matter in cuprates.

Electronic subband reconfiguration in a d0-perovskite induced by strain-driven structural transformations.

It is well known that transport in lightly n-doped SrTiO(3) involves light and heavy electron bands. We have found that upon application of moderate quasi-isotropic pressures, the relative positions of these subbands are changed by a few meV and, eventually, a band inversion occurs at ~1 kbar. Such effects are, however, suppressed in the closely related KTaO(3) perovskite. We show that the extremely subtle electronic reconfiguration in SrTiO(3) is triggered by strain-induced structural transformations that are accompanied by remarkable mobility enhancements up to about Δµ/µ≈300%. Our results provide a microscopic rationale for the recently discovered transport enhancement under strain and underscore the role of the internal structural degrees of freedom in the modulation of the perovskite electronic properties.

Interface-induced room-temperature multiferroicity in BaTiO3.

Multiferroic materials possess two or more ferroic orders but have not been exploited in devices owing to the scarcity of room-temperature examples. Those that are ferromagnetic and ferroelectric have potential applications in multi-state data storage if the ferroic orders switch independently, or in electric-field controlled spintronics if the magnetoelectric coupling is strong. Future applications could also exploit toroidal moments and optical effects that arise from the simultaneous breaking of time-reversal and space-inversion symmetries. Here, we use soft X-ray resonant magnetic scattering and piezoresponse force microscopy to reveal that, at the interface with Fe or Co, ultrathin films of the archetypal ferroelectric BaTiO3 simultaneously possess a magnetization and a polarization that are both spontaneous and hysteretic at room temperature. Ab initio calculations of realistic interface structures provide insight into the origin of the induced moments and bring support to this new approach for creating room-temperature multiferroics.

A versatile nanotechnology to connect individual nano-objects for the fabrication of hybrid single-electron devices.

We report on the high yield connection of single nano-objects as small as a few nanometres in diameter to separately elaborated metallic electrodes, using a 'table-top' nanotechnology. Single-electron transport measurements validate that transport occurs through a single nano-object. The vertical geometry of the device natively allows an independent choice of materials for each electrode and the nano-object. In addition ferromagnetic materials can be used without encountering oxidation problems. The possibility of elaborating such hybrid nanodevices opens new routes for the democratization of spintronic studies in low dimensions.

Ferroelectric control of spin polarization.

A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

Phase-locking of magnetic vortices mediated by antivortices.

Synchronized spin-valve oscillators may lead to nanosized microwave generators that do not require discrete elements such as capacitors or inductors. Uniformly magnetized oscillators have been synchronized, but offer low power. Gyrating magnetic vortices offer greater power, but vortex synchronization has yet to be demonstrated. Here we find that vortices can interact with each other through the mediation of antivortices, leading to synchronization when they are closely spaced. The synchronization does not require a magnetic field, making the system attractive for electronic device integration. Also, because each vortex is a topological soliton, this work presents a model experimental system for the study of interacting solitons.

Giant tunnel electroresistance for non-destructive readout of ferroelectric states.

Ferroelectrics possess a polarization that is spontaneous, stable and electrically switchable, and submicrometre-thick ferroelectric films are currently used as non-volatile memory elements with destructive capacitive readout. Memories based on tunnel junctions with ultrathin ferroelectric barriers would enable non-destructive resistive readout. However, the achievement of room-temperature polarization stability and switching at very low thickness is challenging. Here we use piezoresponse force microscopy at room temperature to show robust ferroelectricity down to 1 nm in highly strained BaTiO(3) films; we also use room-temperature conductive-tip atomic force microscopy to demonstrate resistive readout of the polarization state through its influence on the tunnel current. The resulting electroresistance effect scales exponentially with ferroelectric film thickness, reaching approximately 75,000% at 3 nm. Our approach exploits the otherwise undesirable leakage current-dominated by tunnelling at these very low thicknesses-to read the polarization state without destroying it. We demonstrate scalability down to 70 nm, corresponding to potential densities of >16 Gbit inch(-2). These results pave the way towards ferroelectric memories with simplified architectures, higher densities and faster operation, and should inspire further exploration of the interplay between quantum tunnelling and ferroelectricity at the nanoscale.

Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces.

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within approximately 10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than approximately 6x10(13) cm(-2). We discuss the experimental and simulations results in terms of a multiband carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is approximately 16 nm, indicating that the electron gas in on the verge of two dimensionality.

Evidence for room-temperature multiferroicity in a compound with a giant axial ratio.

In the search for multiferroic materials magnetic compounds with a strongly elongated unit-cell (large axial ratio c/a) have been scrutinized intensely. However, none was hitherto proven to have a switchable polarization, an essential feature of ferroelectrics. Here, we provide evidence for the epitaxial stabilization of a monoclinic phase of BiFeO3 with a giant axial ratio (c/a=1.23) that is both ferroelectric and magnetic at room temperature. Surprisingly, and in contrast with previous theoretical predictions, the polarization does not increase dramatically with c/a. We discuss our results in terms of the competition between polar and antiferrodistortive instabilities and give perspectives for engineering multiferroic phases.

Structural and magnetic properties of Co-doped (La,Sr)TiO(3) epitaxial thin films probed using x-ray magnetic circular dichroism.

We report a study of Co-doped La(0.37)Sr(0.63)TiO(3-δ) thin films grown by pulsed laser deposition in various oxygen pressure conditions. X-ray absorption spectroscopy and magnetic circular dichroism measurements at the Co L(2,3) edges reveal that the cobalt mainly substitutes for the titanium and is in an ionic state. Nevertheless, in some films, indications of additional cobalt metallic impurities were found, suggesting that the intrinsic character of this magnetic system remains questionable.

Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures.

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO(3)/SrTiO(3) system . Although this state has been predicted and reported to be confined at the interface, some studies indicate a much broader spatial extension, thereby questioning its origin. Here, we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO(3)/SrTiO(3) samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending on specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of micrometres into SrTiO(3) to a few nanometres next to the LaAlO(3)/SrTiO(3) interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.

Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films.

We have combined neutron scattering and piezoresponse force microscopy to show that the exchange field in CoFeB/BiFeO_{3} heterostructures scales with the inverse of the ferroelectric and antiferromagnetic domain size of the BiFeO3 films, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with CoFeB. In view of these results, we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3.

High mobility in LaAlO3/SrTiO3 heterostructures: origin, dimensionality, and perspectives.

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (P(O2)<10(-5) mbar) and has a three-dimensional character. However, at higher P(O2) the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low P(O2), other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.

Co-doped (La, Sr)TiO(3-delta) : a high Curie temperature diluted magnetic system with large spin polarization.

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La, Sr)TiO(3-delta) (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.