Study of activation cross sections of double neutron capture reaction on 193Ir for the reactor production route of radiotherapeutic 195mPt.

The radiotherapeutic 195mPt is among the most effective Auger electron emitters of the currently studied radionuclides that have a potential theranostic application in nuclear medicine. Production of 195mPt through double neuron capture of enriched 193Ir followed by ß--decay to the radioisotope of interest carried out at the research reactor IBR-2 is described. Because of the high radiation background, radiochemical purification procedure of 195mPt from bulk of iridium was needed to be developed and is detailed here as well. For the first time, cross section and resonance integral for the reaction 194Ir(n,γ)195mIr were determined. Resonance neutrons contribution was established to exceed that of thermal neutrons, and resonance integral for the reaction 194Ir(n,γ)195mIr is calculated to be 2900 b. Specific activity of 195mPt was estimated to reach a value of 38.7 GBq/(g Pt) at IBR-2 by the end of bombardment (EOB).

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures.

The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm-2 ÷ 1.2 × 1016 cm-2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.