Quantum sensing of radio-frequency signal with NV centers in SiC.

Silicon carbide is an emerging platform for quantum technologies that provides wafer scale and low-cost industrial fabrication. The material also hosts high-quality defects with long coherence times that can be used for quantum computation and sensing applications. Using an ensemble of nitrogen-vacancy centers and an XY8-2 correlation spectroscopy approach, we demonstrate a room-temperature quantum sensing of an artificial AC field centered at ~900 kHz with a spectral resolution of 10 kHz. Implementing the synchronized readout technique, we further extend the frequency resolution of our sensor to 0.01 kHz. These results pave the first steps for silicon carbide quantum sensors toward low-cost nuclear magnetic resonance spectrometers with a wide range of practical applications in medical, chemical, and biological analysis.

Single Photon Frequency Conversion for Frequency Multiplexed Quantum Networks in the Telecom Band.

High-speed long-range quantum communication requires combining frequency multiplexed photonic channels with quantum memories. We experimentally demonstrate an integrated quantum frequency conversion protocol that can convert between wavelength division multiplexing channels in the telecom range with an efficiency of 55±8% and a noise subtracted Hong-Ou-Mandel (HOM) dip visibility of 84.5%. This protocol is based on a cascaded second order nonlinear interaction and can be used to interface a broad spectrum of frequencies with narrowband quantum memories, or alternatively as a quantum optical transponder, efficiently interfacing different regions of a frequency-multiplexed spectrum.

HWCVD a-Si:H interlayer slope waveguide coupler for multilayer silicon photonics platform.

We present interlayer slope waveguides, designed to guide light from one level to another in a multi-layer silicon photonics platform. The waveguide is fabricated from hydrogenated amorphous silicon (a-Si:H) film, deposited using hot-wire chemical vapor deposition (HWCVD) at a temperature of 230°C. The interlayer slope waveguide is comprises of a lower level input waveguide and an upper level output waveguide, connected by a waveguide on a slope, with vertical separation to isolate other crossing waveguides. Measured loss of 0.17 dB/slope was obtained for waveguide dimensions of 600 nm waveguide width (w) and 400 nm core thickness (h) at a wavelength of 1550 nm and for transverse electric (TE) mode polarization.

Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths: publisher's note.

This publisher's note corrects an error in the abstract in Opt. Lett.43, 855 (2018)OPLEDP0146-959210.1364/OL.43.000855.

Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths.

We demonstrate on-chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible plasma-enhanced chemical vapor deposition silicon nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high intrinsic quality Q-factor of 3,20,000, resulting in a generation rate of 950,000 pairsmW. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.