Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD.

Two-dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials' properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar-blind photodiodes and light-emitting diodes as applications. However, achieving commercial viability requires wafer-scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one-step synthesis of 2D GaS is introduced via metal-organic chemical vapor deposition on sapphire substrates. The pulsed-mode deposition of industry-standard precursors promotes 2D growth by inhibiting the vapor phase and on-surface pre-reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin-film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications.

Easy access to strongly fluorescent higher homologues of BODIPY.

We present the easy and high yield synthesis of several group 13 MesDPM compounds (Al-In) with alkyl substituents at the metal atom. All these compounds were fully characterized using techniques including X-ray diffraction analysis and photoluminescence measurements. It shows that for aluminium and gallium pronounced green fluorescence is observed, which is absent for indium. DFT calculations confirm that the first electronic transition corresponds to a ligand-based π-π* transition.

Enhanced Circular Dichroism and Polarized Emission in an Achiral, Low Band Gap Bismuth Iodide Perovskite Derivative.

Lead halide perovskites and related main-group halogenido metalates offer unique semiconductor properties and diverse applications in photovoltaics, solid-state lighting, and photocatalysis. Recent advances in incorporating chiral organic cations have led to the emergence of chiral metal-halide semiconductors with intriguing properties, such as chiroptical activity and chirality-induced spin selectivity, enabling the generation and detection of circularly polarized light and spin-polarized electrons for applications in spintronics and quantum information. However, understanding the structural origin of chiroptical activity remains challenging due to macroscopic factors and experimental limitations. In this work, we present an achiral perovskite derivative [Cu2(pyz)3(MeCN)2][Bi3I11] (CuBiI; pyz = pyrazine; MeCN = acetonitrile), which exhibits remarkable circular dichroism (CD) attributed to the material's noncentrosymmetric nature. CuBiI features a unique structure as a poly-threaded iodido bismuthate, with [Bi3I11]2- chains threaded through a cationic two-dimensional coordination polymer. The material possesses a low, direct optical band gap of 1.70 eV. Notably, single crystals display both linear and circular optical activity with a large anisotropy factor of up to 0.16. Surprisingly, despite the absence of chiral building blocks, CuBiI exhibits a significant degree of circularly polarized photoluminescence, reaching 4.9%. This value is comparable to the results achieved by incorporating chiral organic molecules into perovskites, typically ranging from 3-10% at zero magnetic field. Our findings provide insights into the macroscopic origin of CD and offer design guidelines for the development of materials with high chiroptical activity.

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1-xN.

The lack of internal polarization fields in cubic group-III nitrides makes them promising arsenic-free contenders for next-generation high-performance electronic and optoelectronic applications. In particular, cubic InxGa1-xN semiconductor alloys promise band gap tuning across and beyond the visible spectrum, from the near-ultraviolet to the near-infrared. However, realization across the complete composition range has been deemed impossible due to a miscibility gap corresponding to the amber spectral range. In this study, we use plasma-assisted molecular beam epitaxy (PAMBE) to fabricate cubic InxGa1-xN films on c-GaN/AlN/3C-SiC/Si template substrates that overcome this challenge by careful adjustment of the growth conditions, conclusively closing the miscibility gap. X-ray diffraction reveals the composition, phase purity, and strain properties of the InxGa1-xN films. Scanning transmission electron microscopy reveals a CuPt-type ordering on the atomistic scale in highly alloyed films with x(In) ≈ 0.5. Layers with much lower and much higher indium content exhibit statistical distributions of the cations Ga and In. Notably, this CuPt-type ordering results in a spectrally narrower emission compared to that of statistically disordered zincblende materials. The emission energies of the films range from 3.24 to 0.69 eV and feature a quadratic bowing parameter of b = 2.4 eV. In contrast, the LO-like phonon modes that are observed by Raman spectroscopy exhibit a one-mode behavior and shift linearly from c-GaN to c-InN.

Scalable high-repetition-rate sub-half-cycle terahertz pulses from spatially indirect interband transitions.

Intense phase-locked terahertz (THz) pulses are the bedrock of THz lightwave electronics, where the carrier field creates a transient bias to control electrons on sub-cycle time scales. Key applications such as THz scanning tunnelling microscopy or electronic devices operating at optical clock rates call for ultimately short, almost unipolar waveforms, at megahertz (MHz) repetition rates. Here, we present a flexible and scalable scheme for the generation of strong phase-locked THz pulses based on shift currents in type-II-aligned epitaxial semiconductor heterostructures. The measured THz waveforms exhibit only 0.45 optical cycles at their centre frequency within the full width at half maximum of the intensity envelope, peak fields above 1.1 kV cm-1 and spectral components up to the mid-infrared, at a repetition rate of 4 MHz. The only positive half-cycle of this waveform exceeds all negative half-cycles by almost four times, which is unexpected from shift currents alone. Our detailed analysis reveals that local charging dynamics induces the pronounced positive THz-emission peak as electrons and holes approach charge neutrality after separation by the optical pump pulse, also enabling ultrabroadband operation. Our unipolar emitters mark a milestone for flexibly scalable, next-generation high-repetition-rate sources of intense and strongly asymmetric electric field transients.

Design of Ordered Mesoporous CeO2-YSZ Nanocomposite Thin Films with Mixed Ionic/Electronic Conductivity via Surface Engineering.

Mixed ionic and electronic conductors represent a technologically relevant materials system for electrochemical device applications in the field of energy storage and conversion. Here, we report about the design of mixed-conducting nanocomposites by facile surface modification using atomic layer deposition (ALD). ALD is the method of choice, as it allows coating of even complex surfaces. Thermally stable mesoporous thin films of 8 mol-% yttria-stabilized zirconia (YSZ) with different pore sizes of 17, 24, and 40 nm were prepared through an evaporation-induced self-assembly process. The free surface of the YSZ films was uniformly coated via ALD with a ceria layer of either 3 or 7 nm thickness. Electrochemical impedance spectroscopy was utilized to probe the influence of the coating on the charge-transport properties. Interestingly, the porosity is found to have no effect at all. In contrast, the thickness of the ceria surface layer plays an important role. While the nanocomposites with a 7 nm coating only show ionic conductivity, those with a 3 nm coating exhibit mixed conductivity. The results highlight the possibility of tailoring the electrical transport properties by varying the coating thickness, thereby providing innovative design principles for the next-generation electrochemical devices.

Microscopic origin of near- and far-field contributions to tip-enhanced optical spectra of few-layer MoS2.

Tip-induced optical spectroscopy overcomes the inherent resolution limits of conventional optical techniques enabling studies of sub-nm sized objects due to the tip's near-field antenna action. This statement is true for individual molecules on surfaces or in the gas phase, but does not hold without restrictions for spatially extended samples. The reason is that the perturbations caused by the tip extend into the sample volume. The tip may induce strain, heating or hot-carrier injection locally in the material. These effects add additional degrees of complexity by changing near-field and far-field optical response. The far-field response varies because strain relaxation, heat and carrier diffusion possess areas of influence exceeding the sample area influenced by the short-range near-field effects. Tip-in spectra are not simply enhanced compared to tip-out spectra, they will also vary in spectral appearance, i.e., peak positions, relative peak intensities, and linewidths. Detailed studies of MoS2 samples ranging from a single layer to bulk-like multi-layer MoS2 also reveal that the spectra are sensitive to variations of phonon and band structure with increasing layer number. These variations have a direct impact on the signals detected, but also clearly modify the relative magnitudes of the contributions of the tip-induced effects to the tip-in spectra. In addition, the optical response is affected by the kind of tip and substrate used. Hence, the presented results provide further insight into the underlying microscopic mechanisms of tip-enhanced spectroscopy and demonstrate that 2D materials are an ideal playground for obtaining a fundamental understanding of these spectroscopic techniques.

Atomically Thin Sheets of Lead-Free 1D Hybrid Perovskites Feature Tunable White-Light Emission from Self-Trapped Excitons.

Low-dimensional organic-inorganic perovskites synergize the virtues of two unique classes of materials featuring intriguing possibilities for next-generation optoelectronics: they offer tailorable building blocks for atomically thin, layered materials while providing the enhanced light-harvesting and emitting capabilities of hybrid perovskites. This work goes beyond the paradigm that atomically thin materials require in-plane covalent bonding and reports single layers of the 1D organic-inorganic perovskite [C7 H10 N]3 [BiCl5 ]Cl. Its unique 1D-2D structure enables single layers and the formation of self-trapped excitons, which show white-light emission. The thickness dependence of the exciton self-trapping causes an extremely strong shift of the emission energy. Thus, such 2D perovskites demonstrate that already 1D covalent interactions suffice to realize atomically thin materials and provide access to unique exciton physics. These findings enable a much more general construction principle for tailoring and identifying 2D materials that are no longer limited to covalently bonded 2D sheets.

Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition.

Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity originates from surface modifications of the substrate that allow or block precursor adsorption. The control of the deposition process currently remains a major challenge as the selectivity of the no-growth areas is lost quickly. Here, we show that surface modifications of the substrate strongly manipulate surface diffusion. The selective deposition of TiO2 on poly(methyl methacrylate) and SiO2 yields localized nanostructures with tailored aspect ratios. Controlling the surface diffusion allows tuning such nanostructures as it boosts the growth rate at the interface of the growth and no-growth areas. Kinetic Monte-Carlo calculations reveal that species move from high to low diffusion areas. Further, we identify the catalytic activity of TiCl4 during the formation of carboxylic acid on poly(methyl methacrylate) as the reaction mechanism responsible for the loss of selectivity and show that process optimization leads to higher selectivity. Our work enables the precise control of area-selective atomic layer deposition on the nanoscale and offers new strategies in area-selective deposition processes by exploiting surface diffusion effects.

Charge Transfer Excitation and Asymmetric Energy Transfer at the Interface of Pentacene-Perfluoropentacene Heterostacks.

High-performance solar cells demand efficient charge-carrier excitation, separation, and extraction. These requirements hold particularly true for molecular photovoltaics, where large exciton binding energies render charge separation challenging at their commonly complex donor-acceptor interface structure. Among others, charge-transfer (CT) states are considered to be important precursors for exciton dissociation and charge separation. However, the general nature of CT excitons and their formation pathways remain unclear. Layered quasiplanar crystalline molecular heterostructures of the prototypical donor-acceptor system pentacene-perfluoropentacene studied at cryogenic temperatures are a paramount model system to gain insights into the underlying physical mechanism. In particular, a detailed experiment-theory analysis on a layered heterojunction featuring perfluoropentacene in its π-stacked polymorph and pentacene in the Siegrist phase indicates that exciton diffusion in unitary films can influence the formation efficiency of CT excitons localized at internal interfaces for these conditions. The correlation of the structural characteristics, that is, the molecular arrangement at the interfaces, with their absorption and photoluminescence excitation spectra is consistent with exciton transfer from pentacene to the CT exciton state only, whereas no transfer of excitons from the perfluoropentacene is detected. Electronic structure calculations of the model systems and investigation of coupling matrix elements between the various electronic states involved suggest hampered exciton diffusion toward the internal interface in the perfluoropentacene films. The asymmetric energy landscape around an idealized internal donor-acceptor interface thus is identified as a reason for asymmetric energy transfer. Thus, long-range effects apparently can influence charge separation in crystalline molecular heterostructures, similar to band gap bowing, which is well established for inorganic pn-junctions.

Towards Understanding the Reactivity and Optical Properties of Organosilicon Sulfide Clusters.

We report the extension of the class of organotetrel sulfide clusters with further examples of the still rare silicon-based species, synthesized from RSiCl3 with R=phenyl (Ph, I), naphthyl (Np, II), and styryl (Sty, III) with Na2 S. Besides known [(PhSi)4 S6 ] (IV), new compounds [(NpSi)4 S6 ] (1) and [(StySi)4 S6 ] (2) were obtained, the first two of which underwent reactions with [AuCl(PPh3 )] to form ternary complexes. DFT studies of cluster dimers helped us understand the differences between the habit of {Si4 S6 }- and {Sn4 S6 }-based compounds. Crystalline 1 showed a pronounced nonlinear optical response, while for intrinsically amorphous 2, the chemical damage threshold seems to inhibit a corresponding observation. Calculations within the independent particle approximation served to rationalize and compare electronic and optical excitations of [(RSi)4 S6 ] clusters (R=Ph, Np). The calculations reproduced the measured data and allowed for the interpretation of the main spectroscopic features.

Controlling the White-Light Generation of [(RSn)4 E6 ]: Effects of Substituent and Chalcogenide Variation.

Adamantane-type organotin chalcogenide clusters of the general composition [(RT)4 S6 ] (R=aromatic substituent, T=Si, Ge, Sn) have extreme non-linear optical properties that lead to highly directional white-light generation (WLG) upon irradiation with an IR laser diode. However, the mechanism is not yet understood. Now, a series of compounds [(RSn)4 E6 ] (R=phenyl, cyclopentadienyl, cyclohexyl, benzyl, CH2 CH2 (C6 H4 )CO2 Et; E=S, Se), were prepared, characterized, and investigated for their nonlinear optical properties. With the exception of crystalline [(BnSn)4 S6 ], all these compounds exhibit WLG with similar emission spectra; slight blue-shifts are observed by introduction of cyclopentadienyl substituents, while the introduction of Se in the inorganic core can provoke a red-shift. These investigations disprove the initial assumption of an aromatic substituent being a necessary precondition; the precondition seems to be the presence of (cyclic) substituents providing enough electron density.

Divergent Optical Properties in an Isomorphous Family of Multinary Iodido Pentelates.

Multinary organic-inorganic metal halide materials beyond the perovskite motif can help to address both fundamental aspects such as the electronic interactions between different metalate building units and practical issues like stability and ease of preparation in this new field of research. However, such multinary compounds have remained quite rare for the halogenido pentelates, as the formation of simpler side phases can be a significant hindrance. Here, we report a family of four new multinary iodido pentelates [PPh4]2[ECu2I7(nitrile)] (E = Sb, Bi; nitrile = acetonitile or propionitrile), including the first metalate with a Cu-I-Sb unit. The compounds can be obtained by facile solution or mechanochemical methods and display good stability up to 160 °C. A comparison with compounds containing binary anions [EI6]3- reveals that, unexpectedly, the addition of the iodido cuprate unit causes a blue-shift in the absorption of the antimonates but a red-shift in the bismuthates. Photoluminescence investigations at 10 K show that the compounds display broad luminescence bands that correspond well with the trend in their onset of absorption. Overall, the work highlights that multinary, non-perovskite halogenido metalates can be a valuable expansion of the chemistry of metal halide perovskites.

Charge-transfer processes and carrier dynamics at the pentacene-C60 interface.

Heterostructures of pentacene (PEN) and buckminsterfullerene (C60) are frequently attracting scientific interest as a well-defined small-molecule model system for the study of internal interfaces between two organic semiconductors. They are prototypical representatives forming a donor-acceptor combination for studies of fundamental optoelectronic processes in organic photovoltaics. Despite their importance in exciton dissociation, the energetics of their interfacial charge-transfer (CT) states and their microscopic excitation dynamics are not yet clarified and still being discussed. Here, we present steady-state and time-resolved photoluminescence measurements on stacked heterostructures composed of these two materials. All experiments are performed in the visible and near-infrared spectral regions as CT states are expected at energies below the fundamental electronic transitions of the respective bulk materials. A characteristic, interface-specific emission at around 1.13-1.17 eV is found, which we attribute to an interfacial CT state. Its excitation energy dependence reveals the intricate relaxation dynamics of excitons formed in both constituent materials. Moreover, the analysis of the dynamics of the C60 excitons shows that the lifetime of this state is reduced in the presence of an interface with PEN. This quenching is attributed to a long-range interaction, i.e. the relaxation of excitations into the interfacial CT state.

Ternary Mixed-Valence Organotin Copper Selenide Clusters.

Reactions of the organotin selenide chloride clusters [(R1 SnIV )3 Se4 Cl] (A, R1 =CMe2 CH2 C(O)Me) or [(R1 SnIV )4 Se6 ] (B) with [Cu(PPh3 )3-x Clx ] yield cluster compounds with different inorganic, mixed-valence core structures: [Cu4 SnII SnIV6 Se12 ], [Cu2 SnII2 SnIV4 Se8 Cl2 ], [Cu2 SnII SnIV4 Se8 ], [Cu2 SnII2 SnIV2 Se4 Cl4 ], and [Cu2 SnIV2 Se4 ]. Five of the compounds, namely [(CuPPh3 )2 {(R1 SnIV )2 Se4 }] (1), [(CuPPh3 )2 SnII {(R2 SnIV )2 Se4 }2 ] (2), [(CuPPh3 )2 (SnII Cl)2 {(RSnIV )2 Se4 }2 ] (3) [(CuPPh3 )2 (SnII Cu2 ){(R1 SnIV )2 Se4 }3 ] (4), and [Cu(CuPPh3 )(SnII Cu2 ){(R1 SnIV )2 Se4 }3 ] (5) are structurally closely related. They are based on [(CuPPh3 )2 {(RSnIV )2 Se4 }n ] aggregates comprising [(RSnIV )2 Se4 ] and [CuPPh3 ] building units, which are linked by further metal atoms. A sixth compound, [(CuPPh3 )2 (SnII Cl)2 {(R1 SnIV Cl)Se2 }2 ] (6), differs from the others by containing [(RSnIV Cl)Se2 ] units instead, which affects the absorption properties. The compounds were analyzed by single-crystal X-ray diffraction, NMR and 119 Sn Mössbauer spectroscopy, DFT calculations as well as optical absorption experiments.

Low-lying excited states in crystalline perylene.

Organic materials are promising candidates for advanced optoelectronics and are used in light-emitting diodes and photovoltaics. However, the underlying mechanisms allowing the formation of excited states responsible for device functionality, such as exciton generation and charge separation, are insufficiently understood. This is partly due to the wide range of existing crystalline polymorphs depending on sample preparation conditions. Here, we determine the linear optical response of thin-film single-crystal perylene samples of distinct polymorphs in transmission and reflection geometries. The sample quality allows for unprecedented high-resolution spectroscopy, which offers an ideal opportunity for judicious comparison between theory and experiment. Excellent agreement with first-principles calculations for the absorption based on the GW plus Bethe-Salpeter equation (GW-BSE) approach of many-body perturbation theory (MBPT) is obtained, from which a clear picture of the low-lying excitations in perylene emerges, including evidence of an exciton-polariton stopband, as well as an assessment of the commonly used Tamm-Dancoff approximation to the GW-BSE approach. Our findings on this well-controlled system can guide understanding and development of advanced molecular solids and functionalization for applications.

Interfacial Molecular Packing Determines Exciton Dynamics in Molecular Heterostructures: The Case of Pentacene-Perfluoropentacene.

The great majority of electronic and optoelectronic devices depend on interfaces between p-type and n-type semiconductors. Finding matching donor-acceptor systems in molecular semiconductors remains a challenging endeavor because structurally compatible molecules may not necessarily be suitable with respect to their optical and electronic properties, and the large exciton binding energy in these materials may favor bound electron-hole pairs rather than free carriers or charge transfer at an interface. Regardless, interfacial charge-transfer exciton states are commonly considered as an intermediate step to achieve exciton dissociation. The formation efficiency and decay dynamics of such states will strongly depend on the molecular makeup of the interface, especially the relative alignment of donor and acceptor molecules. Structurally well-defined pentacene-perfluoropentacene heterostructures of different molecular orientations are virtually ideal model systems to study the interrelation between molecular packing motifs at the interface and their electronic properties. Comparing the emission dynamics of the heterosystems and the corresponding unitary films enables accurate assignment of every observable emission signal in the heterosystems. These heterosystems feature two characteristic interface-specific luminescence channels at around 1.4 and 1.5 eV that are not observed in the unitary samples. Their emission strength strongly depends on the molecular alignment of the respective donor and acceptor molecules, emphasizing the importance of structural control for device construction.

Syntheses and Properties of Gold-Organotin Sulfide Clusters.

We report that reactions of the binary organotin sulfide cluster [(R1Sn)3S4]Cl [A; R1 = CMe2CH2C(O)Me] with gold(I) phosphane complexes yield discrete ternary complexes [(R1Sn)2(AuPMe3)2S4] (1) and [(R2Sn)2(AuPMe3)2S4] [2; R2 = CMe2CH2C(NNH2)Me], which are related to recently published complexes [(R1,2Sn)2(AuPPh3)2S4] (B and C). Further, we present a binary tin sulfide cluster that cocrystallizes with a structure-directing salt of a gold phosphane complex in [Au(dppe)2][(R3Sn)4S6Cl] [3; R3 = CMe2CH2C(NNHPh)Me]. The nature of the product depends on the choice of the phosphane ligand as well as the addition of hydrazine hydrate or phenylhydrazine. Additionally, we report on the photophysical properties of 1, 2, B, and C, which indicate that the different phosphane ligands only have a slight influence on the optical responses. The structure, however, has a significant impact on the luminescence efficiency.

Organotetrel Chalcogenide Clusters: Between Strong Second-Harmonic and White-Light Continuum Generation.

Highly directional white-light generation was recently reported for the organotin sulfide cluster [(StySn)4S6] (Sty = p-styryl). This effect was tentatively attributed to the amorphous nature of the material in combination with the specific combination of an inversion-symmetry-free T/E cluster core (T = tetrel, E = chalcogen) with the attachment of ligands that allow π delocalization of the electron density. Systematic variation of T and the organic ligand (R) that runs from T = Si through Ge to Sn and from R = methyl through phenyl and p-styryl to 1-naphthyl provides a more comprehensive view. According to powder X-ray data, only [(PhSi)4S6] is single-crystalline among the named combinations. Here we demonstrate the fine-tuneability of the nonlinear response, i.e., changing from white-light generation to second-harmonic generation as well as controlling the white-light properties. These are investigated as a function of T, π delocalization of the electron density within R, and the order within the molecular solids.