Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III-V monolayers.

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC m-1, outperforming most known 2D ferroelectrics. We demonstrate an electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between the Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET.

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially in the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where the write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a nonferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state, thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation has been performed on fully depleted silicon-on-insulator (FDSOI) FeFETs integrated on a 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the nonferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.

First demonstration of in-memory computing crossbar using multi-level Cell FeFET.

Advancements in AI led to the emergence of in-memory-computing architectures as a promising solution for the associated computing and memory challenges. This study introduces a novel in-memory-computing (IMC) crossbar macro utilizing a multi-level ferroelectric field-effect transistor (FeFET) cell for multi-bit multiply and accumulate (MAC) operations. The proposed 1FeFET-1R cell design stores multi-bit information while minimizing device variability effects on accuracy. Experimental validation was performed using 28 nm HKMG technology-based FeFET devices. Unlike traditional resistive memory-based analog computing, our approach leverages the electrical characteristics of stored data within the memory cell to derive MAC operation results encoded in activation time and accumulated current. Remarkably, our design achieves 96.6% accuracy for handwriting recognition and 91.5% accuracy for image classification without extra training. Furthermore, it demonstrates exceptional performance, achieving 885.4 TOPS/W-nearly double that of existing designs. This study represents the first successful implementation of an in-memory macro using a multi-state FeFET cell for complete MAC operations, preserving crossbar density without additional structural overhead.

SCANet: Securing the Weights With Superparamagnetic-MTJ Crossbar Array Networks.

Deep neural networks (DNNs) form a critical infrastructure supporting various systems, spanning from the iPhone neural engine to imaging satellites and drones. The design of these neural cores is often proprietary or a military secret. Nevertheless, they remain vulnerable to model replication attacks that seek to reverse engineer the network's synaptic weights. In this article, we propose SCANet (Superparamagnetic-MTJ Crossbar Array Networks), a novel defense mechanism against such model stealing attacks by utilizing the innate stochasticity in superparamagnets. When used as the synapse in DNNs, superparamagnetic magnetic tunnel junctions (s-MTJs) are shown to be significantly more secure than prior memristor-based solutions. The thermally induced telegraphic switching in the s-MTJs is robust and uncontrollable, thus thwarting the attackers from obtaining sensitive data from the network. Using a mixture of both superparamagnetic and conventional MTJs in the neural network (NN), the designer can optimize the time period between the weight updation and the power consumed by the system. Furthermore, we propose a modified NN architecture that can prevent replication attacks while minimizing power consumption. We investigate the effect of the number of layers in the deep network and the number of neurons in each layer on the sharpness of accuracy degradation when the network is under attack. We also explore the efficacy of SCANet in real-time scenarios, using a case study on object detection.

Large and anisotropic carrier mobility in monolayers of the MA2Z4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P).

The recent discovery of synthetic two-dimensional materials has opened up a new paradigm for exploring novel transport and optical properties, beyond those found in naturally occurring materials. Here, we present a detailed investigation of the acoustic phonon limited intrinsic carrier mobility in MA2Z4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P) monolayers. We find that out of the twelve monolayers studied, only two are metallic (CrGe2N4 and CrGe2P4), and the rest of them are semiconducting. We demonstrate that the carrier mobilities in these monolayers are anisotropic and show a large variation, ranging from a small value of ∼90 cm2 V-1 s-1 to a large value of ∼104 cm2 V-1 s-1. In addition, we show that strain engineering in these materials can further change the electronic band structure drastically, and change the carrier mobilities by up to a factor of 20. Our detailed and systematic study provides a useful platform for designing electronic devices based on the MA2Z4 family of materials.