Universal radiation tolerant semiconductor.

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/ß) double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the ß-to-γ Ga2O3 transformation, as a function of the increased disorder in ß-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/ß double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

Preparation of Volborthite by a Facile Synthetic Chemical Solvent Extraction Method.

In this work, the extraction of vanadium (V) ions from an alkaline solution using a commercial quaternary ammonium salt and the production of metal vanadates through precipitation stripping were carried out. The crystallization of copper vanadates from the extracts was performed using a solution containing a copper(II) source in concentrated chloride media as a stripping agent. In an attempt to control growth, a stabilizing polymer (polyvinylpyrrolidone, PVP) was added to the stripping solution. The structural characteristics of the crystallized products, mainly copper pyrovanadate (volborthite, Cu3V2O7(OH)2·(H2O)2) nanoflakes and nanoflowers and the experimental parameter influencing the efficiency of the stripping process were studied. From the results, the synthesis of nanostructured vanadates is a simple and versatile method for the fabrication of valuable three-dimensional structures providing abundant active zones for energy and catalytic applications.

Precipitation Stripping of V(V) as a Novel Approach for the Preparation of Two-Dimensional Transition Metal Vanadates.

Cobalt, nickel, manganese and zinc vanadates were synthesized by a hydrometallurgical two-phase method. The extraction of vanadium (V) ions from alkaline solution using Aliquat® 336 was followed by the production of metal vanadates through precipitation stripping. Precipitation stripping was carried out using solutions of the corresponding metal ions (Ni (II), Co (II), Mn (II) and Zn (II), 0.05 mol/L in 4 mol/L NaCl), and the addition time of the strip solution was varied (0, 1 and 2 h). The time-dependent experiments showed a notable influence on the composition, structure, morphology and crystallinity of the two-dimensional vanadate products. Inspired by these findings, we selected two metallic vanadate products and studied their properties as alternative cathode materials for nonaqueous sodium and lithium metal batteries.

Phase Transformation Induced by High Pressure Torsion in the High-Entropy Alloy CrMnFeCoNi.

The forward and reverse phase transformation from face-centered cubic (fcc) to hexagonal close-packed (hcp) in the equiatomic high-entropy alloy (HEA) CrMnFeCoNi has been investigated with diffraction of high-energy synchrotron radiation. The forward transformation has been induced by high pressure torsion at room and liquid nitrogen temperature by applying different hydrostatic pressures and large shear strains. The volume fraction of hcp phase has been determined by Rietveld analysis after pressure release and heating-up to room temperature as a function of hydrostatic pressure. It increases with pressure and decreasing temperature. Depending on temperature, a certain pressure is necessary to induce the phase transformation. In addition, the onset pressure depends on hydrostaticity; it is lowered by shear stresses. The reverse transformation evolves over a long period of time at ambient conditions due to the destabilization of the hcp phase. The effect of the phase transformation on the microstructure and texture development and corresponding microhardness of the HEA at room temperature is demonstrated. The phase transformation leads to an inhomogeneous microstructure, weakening of the shear texture, and a surprising hardness anomaly. Reasons for the hardness anomaly are discussed in detail.

Heterogeneous Sorption of Radionuclides Predicted by Crystal Surface Nanoroughness.

Reactive transport modeling (RTM) is an essential tool for the prediction of contaminants' behavior in the bio- and geosphere. However, RTM of sorption reactions is constrained by the reactive surface site assessment. The reactive site density variability of the crystal surface nanotopography provides an "energetic landscape", responsible for heterogeneous sorption efficiency, not covered in current RTM approaches. Here, we study the spatially heterogeneous sorption behavior of Eu(III), as an analogue to trivalent actinides, on a polycrystalline nanotopographic calcite surface and quantify the sorption efficiency as a function of surface nanoroughness. Based on experimental data from micro-focus time-resolved laser-induced luminescence spectroscopy (µTRLFS), vertical scanning interferometry, and electron back-scattering diffraction (EBSD), we parameterize a surface complexation model (SCM) using surface nanotopography data. The validation of the quantitatively predicted spatial sorption heterogeneity suggests that retention reactions can be considerably influenced by nanotopographic surface features. Our study presents a way to implement heterogeneous surface reactivity into a SCM for enhanced prediction of radionuclide retention.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2.

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by , where e is the charge of the carrier, and n is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe1-xCox)2As2 with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe2As2 system.