Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe2-CrI3 p-n Heterojunction.

Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI3-WSe2-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI3-FLG-hBN heterostructure was also fabricated on identical CrI3 and FLGs for better comparison. Our results show that the WSe2-CrI3 heterostructure, acting as a p-n heterojunction, has advantageous capability in light detection, especially in self-powered light helicity detecting. In the WSe2-CrI3 heterojunction, the absolute value of photocurrent IPH exhibits obvious asymmetry with respect to the bias V, with the IPH of reversely biased WSe2-CrI3 p-n heterojunction being larger. When the CrI3 is fully spin-polarized under a 3 T magnetic field, the reversely biased WSe2-CrI3 heterojunction exhibits advantageous capability in light helicity detecting. Both the short-circuit currents ISC and IPH show one-cycle fluctuation behaviors when the quarter-wave plate rotates 180°, and the corresponding photoresponsivity helicities can be as high as 18.0% and 20.1%, respectively. We attribute the spin-enhanced photovoltaic effect in the WSe2-CrI3 heterojunction and its contribution to circularly polarized light detection to the coordination function of the spin-filter CrI3, the valley electronic monolayer WSe2, and the spin-dependent charge transfer between them. Our work helps us understand the interplay between the magnetic and optoelectronic properties of WSe2-CrI3 heterojunctions and promotes the developing progress of prospective 2D spin optoelectronic devices.

Exploring whether ChatGPT-4 with image analysis capabilities can diagnose osteosarcoma from X-ray images.

The generation of radiological results from image data represents a pivotal aspect of medical image analysis. The latest iteration of ChatGPT-4, a large multimodal model that integrates both text and image inputs, including dermatoscopy images, histology images, and X-ray images, has attracted considerable attention in the field of radiology. To further investigate the performance of ChatGPT-4 in medical image recognition, we examined the ability of ChatGPT-4 to recognize credible osteosarcoma X-ray images. The results demonstrated that ChatGPT-4 can more accurately diagnose bone with or without significant space-occupying lesions but has a limited ability to differentiate between malignant lesions in bone compared to adjacent normal tissue. Thus far, the current capabilities of ChatGPT-4 are insufficient to make a reliable imaging diagnosis of osteosarcoma. Therefore, users should be aware of the limitations of this technology.

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits.

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes.

Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS2 FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS2 FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated. The channel length of the as-fabricated FET is basically determined by the thickness of an insulating layer between the source and drain electrodes. The vertically distributed source and drain electrodes enable to reduce the electrode-occupied area and increase in the device density. The as-fabricated vertical FETs exhibit on/off ratios comparable to those of mechanically exfoliated MoS2 FETs with a nanoscale channel length under identical VDS. In addition, the as-fabricated FETs can work at a VDS as low as 10 mV with a desirable on/off ratio (1.9 × 107), which benefits in developing low-power devices. Moreover, the fabrication process is free from EBL and can be applied to wafer-scale device arrays. The statistical results show that the fabricated FET arrays have a device yield of 87.5% and an average on/off ratio of about 1.7 × 106 at a VDS of 10 mV, with the lowest and highest ones to be about 1.3 × 104 and 1.9 × 107, respectively, demonstrating the good reliability of our fabrication process. Our work promises a bright future for TMDCs in realizing high-density and low-power nanoelectronic devices in ICs.

Large-Scale Vertically Interconnected Complementary Field-Effect Transistors Based on Thermal Evaporation.

With the rapid development of integrated circuits, there is an increasing need to boost transistor density. In addition to shrinking the device size to the atomic scale, vertically stacked interlayer interconnection technology is also an effective solution. However, realizing large-scale vertically interconnected complementary field-effect transistors (CFETs) has never been easy. Currently-used semiconductor channel synthesis and doping technologies often suffer from complex fabrication processes, poor vertical integration, low device yield, and inability to large-scale production. Here, a method to prepare large-scale vertically interconnected CFETs based on a thermal evaporation process is reported. Thermally-evaporated etching-free Te and Bi2S3 serve as p-type and n-type semiconductor channels and exhibit FET on-off ratios of 103 and 105, respectively. The vertically interconnected CFET inverter exhibits a clear switching behavior with a voltage gain of 17 at a 4 V supply voltage and a device yield of 100%. Based on the ability of thermal evaporation to prepare large-scale uniform semiconductor channels on arbitrary surfaces, repeated upward manufacturing can realize multi-level interlayer interconnection integrated circuits.

Microgravimetric Modeling-A New Method for Extracting Adsorption Parameters of Functionalized MIL-101(Cr).

As a volatile air pollutant, formaldehyde can enter people's living environment through interior decoration, furniture and paint, causing serious harm to human health. Therefore, it is necessary to develop a sensor for the real-time detection of formaldehyde in low concentrations. According to the chemical interaction between amino groups and formaldehyde, a MIL-101(Cr) aminated-material-based formaldehyde cantilever sensor was prepared, of which ethylenediamine- functionalized MIL-101(Cr) named ED-MIL-101(Cr)) showed the best gas sensing performance. Using quasi-in situ infrared spectroscopy, ED-MIL-101(Cr) was found bound to formaldehyde through a Schiff base. The adsorption enthalpy of formaldehyde-bound ED-MIL-101(Cr) was -52.6 kJ/mol, which corresponds to weak chemical adsorption, so the material showed good selectivity. In addition, ED-MIL-101(Cr) has the most active sites, so its response value to formaldehyde is larger and it takes longer to reach saturation adsorption than bare MIL-101(Cr). Through the research on the gas sensing performance of functionalized MIL-101(Cr) material, we found that it has a strong application potential in the field of formaldehyde monitoring, and the material performance can be quantitatively and accurately evaluated through combining calculation and experimentation for understanding the gas sensing mechanism.

Engineering a Heterophase Interface by Tailoring the Pt Coverage Density on an Amorphous Ru Surface for Ultrasensitive H2S Detection.

Amorphous/crystalline heterophase engineering is emerging as an attractive strategy to adjust the properties and functions of nanomaterials. Here, we reveal a heterophase interface role by precisely tailoring the crystalline Pt coverage density on an amorphous Ru surface (cPt/aRu) for ultrasensitive H2S detection. We found that when the atomic ratio of Pt/Ru increased from 10 to 50%, the loading modes of Pt changed from island coverage (1cPt/aRu) to cross-linkable coverage (3cPt/aRu) and further to dense coverage (5cPt/aRu). The differences in coverage models further regulate the chemical adsorption of H2S on Pt and the electronic transformation process on Ru, which can be proved by ex situ X-ray photoelectron spectroscopy experiments. Notably, a special cross-linkable coverage 3cPt/aRu on ZnO shows the best gas-sensitive performance, in which the operating temperature reduces from 240 to 160 °C compared with pristine ZnO and the selectivity coefficient for H2S gas improves from ∼1.2 to ∼4.6. This is mainly benefit from the maximized exposure of the amorphous/crystalline heterophase interface. Our work thus provides a new platform for future applications of amorphous/crystalline heterogeneous nanostructures in gas sensors and catalysis.

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS2 and p-MoTe2.

In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS2 and p-MoTe2 grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO2 is used as the gate dielectric. An Al2 O3 seed layer is used to protect the MoS2 from heavily n-doping in the later-on atomic layer deposition process. P-MoTe2 FET is intentionally designed as the upper layer. Because p-doping of MoTe2 results from oxygen and water in the air, this design can guarantee a higher hole density of MoTe2 . An HfO2 capping layer is employed to further balance the transfer curves of n- and p-channel FETs and improve the performance of the inverter. The typical gain and power consumption of the CMOS devices are about 4.2 and 0.11 nW, respectively, at VDD of 1 V. The statistical results show that the CMOS array is with high device yield (60%) and an average voltage gain value of about 3.6 at VDD of 1 V. This work demonstrates the advantage of two-dimensional semi-conductive transition metal dichalcogenides in fabricating high-density integrated circuits.

New Application of Quartz Crystal Microbalance: A Minimalist Strategy to Extract Adsorption Enthalpy.

The capture and separation of CO2 is an important means to solve the problem of global warming. MOFs (metal-organic frameworks) are considered ideal candidates for capturing CO2, where the adsorption enthalpy is a crucial indicator for the screening of materials. For this purpose, we propose a new minimalist solution using QCM (quartz crystal microbalance) to extract the CO2 adsorption enthalpy on MOFs. Three kinds of MOFs with different properties, sizes and morphologies were employed to study the adsorption enthalpy of CO2 using a QCM platform and a commercial gas sorption analyzer. A Gaussian simulation calculation and previously data reported were used for comparison. It was found that the measuring errors were between 5.4% and 6.8%, proving the reliability and versatility of our new method. This low-cost, easy-to-use, and high-accuracy method will provide a rapid screening solution for CO2 adsorption materials, and it has potential in the evaluation of the adsorption of other gases.

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2.

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe2 and n-MoS2, which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al2O3. Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.

Light helicity detector based on 2D magnetic semiconductor CrI3.

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI3-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI3 devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI3. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI3. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI3 and paves the way to developing spin-optoelectronic devices.

Studies on the anti-psoriasis effects and its mechanism of a dual JAK2/FLT3 inhibitor flonoltinib maleate.

Psoriasis is a chronic, inflammatory autoimmune disease mediated by T cells, and characterized with abnormal proliferation and differentiation of keratinocytes, and inflammatory infiltration. The Janus kinase-signal transducer and activator of transcription (JAK-STAT) pathway has been identified to play essential roles in mediating various of biological processes, and is closely related to autoimmune diseases. Dendritic cells (DCs) are important antigen presenting cells and play an important regulatory role in T cells. The proliferation, differentiation and function of DCs are regulated by JAK and FMS-like tyrosine kinase 3 (FLT3) signal pathways. Flonoltinib maleate (FM), a high selectivity dual JAK2/FLT3 inhibitor with IC50 values of 0.8 nM and 15 nM for JAK2 and FLT3, respectively, was developed by our laboratory. Moreover, FM was a potent JAK2 inhibitor with 863-fold and 696-fold selectivity over JAK1 and JAK3, respectively. In this study, the anti-psoriasis activity of FM was evaluated both in vitro and in vivo. FM effectively inhibited the proliferation of HaCaT, the inflammatory keratinocyte induced by M5 and markedly suppressed the generation and differentiation of DCs from bone marrow (BM), and inhibited the expression of FLT3 in DCs in vitro. FM effectively inhibited the ear thickening and improved the pathological changes of the ear in interleukin (IL)-23-induced psoriasis-like acanthosis mouse model. Further in keratin 14-vascular endothelial growth factor (K14-VEGF) transgenic homozygous mice model, FM could obviously improve the psoriatic symptom and pathological changes, significantly inhibit the generations of Th1 and Th17 cells in the spleen, and the accumulations of DCs in the ears. FM could also significantly reduce the expression of various inflammatory factors both in C57BL/6 and K14-VEGF mice ears, and the serum of K14-VEGF mice. Mechanism revealed that FM effectively suppressed the phosphorylation of JAK2, STAT3 and STAT5 in inflammatory keratinocytes and the mice ears of C57BL/6 and K14-VEGF, as well as the phosphorylation of FLT3 in K14-VEGF mice ears. In conclusion, FM plays an excellent anti-psoriasis activity, including inhibiting keratinocyte proliferation and regulating inflammatory response through inhibiting JAK2 and FLT3 signaling pathway.

The growth behavior of brain-like SnO2 microspheres under a solvothermal reaction with tetrahydrofuran as a solvent and their gas sensitivity.

In this paper, the growth behavior of brain-like SnO2 microspheres synthesized by a tetrahydrofuran (THF) solvothermal method was studied. Unlike water or ethanol as the solvent, THF is a medium polar and aprotic solvent. Compared with other common polar solvents, the THF has no strong irregular effects on the growth process of SnO2. In addition, the viscosity of THF also helps the SnO2 to form a regular microstructure. The growth behavior of the brain-like SnO2 microspheres is controlled by changing the synthesis temperature of the reaction. The SEM and TEM results reveal that the SnO2 forms particles first (125 °C/3 h), and then these nanoparticles connect to each other forming nanowires and microspheres (diameter ≈ 1-2 µm) at 135 °C for 3 h; finally the microspheres further aggregate to form double or multi-sphere structures at 180 °C for 3 h. In this paper, the brain-like SnO2 microspheres obtained at 125 °C for 3 h were selected as sensitive materials to test their gas sensing performance at different operating temperature (50 °C and 350 °C). The H2S was tested at 50 °C which is the lowest operating temperature for the sensor. The combustible gas (H2/CH4/CO) was measured at 350 °C which is the highest temperature for the sensor. They all have extremely high sensitivity, but only H2S has excellent selectivity.

High-Sensitive MEMS Hydrogen Sulfide Sensor made from PdRh Bimetal Hollow Nanoframe Decorated Metal Oxides and Sensitization Mechanism Study.

Here we report the fabrication of a high performance metal oxide semiconductor (MOS) sensor for the detection of hydrogen sulfide (H2S) using PdRh bimetal hollow nanocube (HC) with Rh-rich hollow frame and Pd-rich core frame as sensitizing materials. PdRh bimetal HC with the edge-length about 10 nm was prepared by chemical etching PdRh bimetal solid nanocube (SC) in HNO3 aqueous solution. The results of gas-sensing tests indicate that the response value order of the MEMS gas sensors based on MOSs (including ZnO, MoO3 and SnO2) is as follows: RPdRh HC/MOS > RPdRh SC/MOS > RMOS. First, in the system of ZnO, gas sensor modified by PdRh (PdRh SC/ZnO and PdRh HC/ZnO) possess enhanced H2S sensing performance with a better response and excellent low-concentration detection capability (down to 15 ppb) comparing to pure ZnO. The improved H2S sensing performance could be attributed to the good conductivity of Rh-rich frame, the high catalytic activity of PdRh bimetal and formation of Schottky barrier-type junctions and defect. Second, PdRh HC/ZnO sensor shows better response (185-1 ppm of H2S) compared to PdRh SC/ZnO sensor (108-1 ppm of H2S), which is due to the higher specific surface area of PdRh HC/ZnO and good gas diffusion of the hollow structure. This work indicate that the sensitization characteristics of PdRh bimetal HC will provide new paradigms for the future development of the high performance sensor.

Ultrafine Tungsten Oxide Nanowires: Synthesis and Highly Selective Acetone Sensing and Mechanism Analysis.

By using WCl6 as a precursor and absolute ethanol as a solvent, ultrafine W18O49 nanowires (UFNWs) were synthesized by a one-pot solution-phase method and used as gas sensing materials. Their crystal structure, morphology, and specific surface area can be regulated by controlling precisely the content of the WCl6 precursor in the solution. It has been found that, when the content of the precursor is 4 mg/mL, the formed products are UFNWs with a diameter of about 0.8 nm, only one crystal plane [010] is exposed, and the specific surface area is 194.72 m2/g. After the gas sensing test, we found that they have excellent selectivity to acetone. The response of 50 ppm acetone reaches 48.6, the response and recovery times are 11 and 13 s, respectively. In order to evaluate the interaction between W18O49 surfaces and different volatile organic compound (VOC) molecules, we simulated and calculated the adsorption energy (EAds) among different W18O49 surfaces and different VOCs by DFT. The calculated results are in agreement with the experimental results, further confirming the ultrahigh selectivity of W18O49 UFNWs to acetone. The above results demonstrate that the high selectivity of W18O49 UFNWs to acetone is due to the exposure of its single crystal plane [010]. This work has practical significance for better detection of acetone.

Superhydrophobic Polymerized n-Octadecylsilane Surface for BTEX Sensing and Stable Toluene/Water Selective Detection Based on QCM Sensor.

The present study reports a facile and low-cost route to produce a superhydrophobic polymerized n-octadecylsilane surface with micronano hierarchical structure on the surface of quartz crystal microbalance (QCM). The surface is used as a novel functional sensing material to detect benzene, toluene, ethylbenzene, and xylene (BTEX) vapor on the basis of QCM platform. The composites were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, and contact angle measurements. The type of solvent used to dissolve N-octadecyltrichlorosilane has a big impact on the morphology, wettability, and sensing performance of the polymer material. Further systematic studies suggest that surface wettability (contact angle) and molecular polarity of the detected analytes are effective factors in selective detection toward BTEX using resonator-type gas sensors. Gas sensing results toward toluene in different relative humidities show that the new-style sensor has stable toluene/water selective detection performance and that the disturbance of water is negligible. Besides, the limit of detection toward toluene of the sensor is lower than the odor threshold value.

Controllable Evolution of Dual Defect Zni and VO Associate-Rich ZnO Nanodishes with (0001) Exposed Facet and Its Multiple Sensitization Effect for Ethanol Detection.

Building an effective way for finding the role of surface defects in gas sensing property remains a big challenge. In the present work, we synthesized the ZnO nanodishes (NDs) and first explored the formation process of rich electron donor surface defects by means of studying mechanism for the ZnO NDs synthesis. The test results revealed that ZnO-6, added by 6 mmol Zn powder, had the best gas-sensing properties with the excellent selectivity to ethanol than the others. Specially, the ZnO-6 sensor exhibited the best response (about 49) to 100 ppm ethanol at 230 °C among four as-synthesized samples, while noncustomized ZnO was only 28. It was mainly caused by the following two reasons: the exposure of target (0001) crystal facet and rich electron donor surface defects zinc interstitial (Zni) and oxygen vacancy (VO). As a guide, the formation process of surface defects was revealed by an ideal defect model. By the small-angle XRD and TEM patterns, we could conclude that ZnO NDs, changing stoichiometric ratio, increased the content of Zni by adding Zn powder, while excessive Zn powder promoted the growth of c axis of ZnO NDs in the self-assembly engineering. Besides, a depletion model has been provided to explain how the surface defects work on the sensors and the complex mechanism of gas sensing performance. These findings will develop the application of ZnO-based gas sensor in health and security.

Origin and Luminescence of Anomalous Red-Emitting Center in Rhombohedral Ba9Lu2Si6O24:Eu(2+) Blue Phosphor.

We obtain a blue phosphor, Ba9Lu2Si6O24:Eu(2+) (BLS:Eu(2+)), which shows a strong emission peak at 460 nm and a weak tail from 460 to 750 nm. A 610 nm red emission is observed for the first time in this kind of rhombohedral structure material, which is much different from the same crystal structure of Ba9Sc2Si6O24:Eu(2+) and Ba9Y2Si6O24:Eu(2+). The luminescence properties and decays from 10 to 550 K are discussed. The new red emission arises from a trapped exciton state of Eu(2+) at the Ba site with a larger coordination number (12-fold). It exhibits abnormal luminescence properties with a broad bandwidth and a large Stokes shift. Under the 400 nm excitation, the external quantum efficiency of BLS:Eu(2+) is 45.4%, which is higher than the 35.7% for the commercial blue phosphor BAM:Eu(2+). If the thermal stability of BLS:Eu(2+) can be improved, it will show promising applications in efficient near-UV-based white LEDs.

Gravimetric chemical sensors based on silica-based mesoporous organic-inorganic hybrids.

Silica-based mesoporous organic-inorganic hybrid material modified quartz crystal microbalance (QCM) sensors have been examined for their ability to achieve highly sensitive and selective detection. Mesoporous silica SBA-15 serves as an inorganic host with large specific surface area, facilitating gas adsorption, and thus leads to highly sensitive response; while the presence of organic functional groups contributes to the greatly improved specific sensing property. In this work, we summarize our efforts in the rational design and synthesis of novel sensing materials for the detection of hazardous substances, including simulant nerve agent, organic vapor, and heavy metal ion, and develop high-performance QCM-based chemical sensors.

The template-free synthesis of square-shaped SnO(2) nanowires: the temperature effect and acetone gas sensors.

Square-shaped single-crystalline SnO(2) nanowires and their sphere-like hierarchical structures were synthesized successfully with a template-free hydrothermal approach. It was found that an intermediate phase-Na(2)Sn(OH)(6)-is first produced because it is slow to dissolve in ethanol/water media. The intermediate phase gradually decomposes and converts into SnO(2) at temperatures higher than 200 °C. The reaction temperature also affects the microstructure of SnO(2) nanomaterials. Uniform square-shaped SnO(2) nanowires, which form sphere-like hierarchical structures in 100% structure yield, can be produced at 285 °C on a large scale. The diameter of the nanowires shows a decrease accompanying the increase of the reaction temperature. The temperature effect could be a result of the faster and oriented growth of SnO(2) nanowires along their [Formula: see text] direction at higher temperature. Chemical sensors constructed with square-shaped SnO(2) nanowires exhibit excellent stability, good sensitivity and selectivity, as well as a quick response and short recovery times under exposure to acetone gas in practical applications.