Programmable redox state of the nickel ion chain in DNA.

DNA is a nanowire in nature which chelates Ni ions and forms a conducting chain in its base-pairs (Ni-DNA). Each Ni ion in Ni-DNA exhibits low (Ni(2+)) or high (Ni(3+)) oxidation state and can be switched sequentially by applying bias voltage with different polarities and writing times. The ratio of low and high oxidation states of Ni ions in Ni-DNA represents a programmable multistate memory system with an added capacitive component, in which multistate information can be written, read, and erased. This study also indicates that the biomolecule-based self-organized nanostructure can be used as a template for nanodevice fabrication.

Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids.

Octahedral PbSe colloidal nanocrystals (NCs) are used to assemble a solid. Because of the special feature of the apexes of the octahedrons, the cross-sectional area of the inter-dot tunneling junctions is much smaller than that formed between spherical NCs. The inter-dot separation between NCs is easily adjusted by mild thermal treatment. Like a spherical NC-solid, the resistance of the octahedral NC-solid is exponentially dependent on the inter-dot separation. On the contrary, due to the difference in the cross-sectional area between the NCs, electron transport in the octahedral NC-solid does not follow the same model used for the explanation of electron transport in a spherical NC-solid. Through analyses of current-voltage and resistance-temperature behaviors, we have confirmed that the model of fluctuation-induced tunneling conduction fits very well with all of the data and explains the variation in the electrical properties of octahedral PbSe colloidal NC-solids after thermal annealing.

Nanocrystal shape and nanojunction effects on electron transport in nanocrystal-assembled bulks.

Bulk nanostructured materials are made from the assembly of octahedral PbSe nanocrystals. After thermal annealing, the artificial bulk demonstrates a large difference in behavior depending on the temperature, and a large variation of room-temperature resistivity of up to seven orders of magnitude. This variation originates from the high-indexed sharp edges of the octahedral nanocrystals. As the nanocrystals are arranged in the edge-to-edge configuration, which was observed in scanning electron microscopy images, the inter-nanocrystal capacitance is small due to the small parallel area between the nanocrystals. The small capacitance results in a high thermal fluctuation voltage and drives electron transport. The temperature-dependent resistivity and the electric field-dependent current are highly in agreement with the model of fluctuation-induced tunneling conduction. Thermal annealing reduces the inter-nanocrystal separation distance, creating a large variation in the electrical properties. Specifically, octahedral-shaped PbSe nanocrystals are employed in tailoring the electron transport in bulk nanostructured materials.

Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations.

DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of patterning resolution, it is not feasible to make electrical contacts on ultra-small nanomaterials for a bottom-up device fabrication. Thus, integrating the lithography and dielectrophoresis, a real bottom-up fabrication can be achieved. In this work, the device with the nanogap in between two nanofinger-electrodes is made using electron-beam lithography from top down and the ultra-small nanomaterials, such as colloidal PbSe quantum dots, polyaniline nanofibers, and reduced-graphene-oxide flakes, are placed in the nanogap by DEP from bottom up. The threshold electric field for the DEP placement of PbSe nanocrystals was roughly estimated to be about 8.3 × 10(4) V/cm under our experimental configuration. After the DEP process, several procedures for reducing contact resistances are attempted and measurements of intrinsic electron transport in versatile nanomaterials are performed. It is experimentally confirmed that electron transport in both PbSe nanocrystal arrays and polyaniline nanofibers agrees well with Prof. Ping Sheng's model of granular metallic conduction. In addition, electron transport in reduced-graphene-oxide flakes follows Mott's 2D variable-range-hopping model. This study illustrates an integration of the electron-beam lithography and the DEP techniques for a precise manipulation of nanomaterials into electronic circuits for characterization of intrinsic properties.