Enhanced spin Seebeck effect via oxygen manipulation.

Spin Seebeck effect (SSE) refers to the generation of an electric voltage transverse to a temperature gradient via a magnon current. SSE offers the potential for efficient thermoelectric devices because the transverse geometry of SSE enables to utilize waste heat from a large-area source by greatly simplifying the device structure. However, SSE suffers from a low thermoelectric conversion efficiency that must be improved for widespread application. Here we show that the SSE substantially enhances by oxidizing a ferromagnet in normal metal/ferromagnet/oxide structures. In W/CoFeB/AlOx structures, voltage-induced interfacial oxidation of CoFeB modifies the SSE, resulting in the enhancement of thermoelectric signal by an order of magnitude. We describe a mechanism for the enhancement that results from a reduced exchange interaction of the oxidized region of ferromagnet, which in turn increases a temperature difference between magnons in the ferromagnet and electrons in the normal metal and/or a gradient of magnon chemical potential in the ferromagnet. Our result will invigorate research for thermoelectric conversion by suggesting a promising way of improving the SSE efficiency.

Voltage-driven gigahertz frequency tuning of spin Hall nano-oscillators.

Spin Hall nano-oscillators (SHNOs) exploiting current-driven magnetization auto-oscillation have recently received much attention because of their potential for neuromorphic computing. Widespread applications of neuromorphic devices with SHNOs require an energy-efficient method of tuning oscillation frequency over broad ranges and storing trained frequencies in SHNOs without the need for additional memory circuitry. While the voltage-driven frequency tuning of SHNOs has been demonstrated, it was volatile and limited to megahertz ranges. Here, we show that the frequency of SHNOs is controlled up to 2.1 GHz by an electric field of 1.25 MV/cm. The large frequency tuning is attributed to the voltage-controlled magnetic anisotropy (VCMA) in a perpendicularly magnetized Ta/Pt/[Co/Ni]n/Co/AlOx structure. Moreover, the non-volatile VCMA effect enables cumulative control of the frequency using repetitive voltage pulses which mimic the potentiation and depression functions of biological synapses. Our results suggest that the voltage-driven frequency tuning of SHNOs facilitates the development of energy-efficient neuromorphic devices.

Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures.

Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.

Current-induced manipulation of exchange bias in IrMn/NiFe bilayer structures.

The electrical control of antiferromagnetic moments is a key technological goal of antiferromagnet-based spintronics, which promises favourable device characteristics such as ultrafast operation and high-density integration as compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments by electric current has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report current-induced manipulation of the exchange bias in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface which then rotate the antiferromagnetic moments. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.

Magnetic Anisotropy and Damping Constant of Ferrimagnetic GdCo Alloy near Compensation Point.

Metallic ferrimagnets with rare earth-transition metal alloys can provide novel properties that cannot be obtained using conventional ferromagnets. Recently, the compensation point of ferrimagnets, where the net magnetization or net angular momentum vanishes, has been considered a key aspect for memory device applications. For such applications, the magnetic anisotropy energy and damping constant are crucial. In this study, we investigate the magnetic anisotropy and damping constant of a GdCo alloy, with a Gd concentration of 12-27%. By analyzing the equilibrium tilting of magnetization as a function of the applied magnetic field, we estimate the uniaxial anisotropy to be 1-3 × 104 J m-3. By analyzing the transient dynamics of magnetization as a function of time, we estimate the damping constant to be 0.08-0.22.

Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers.

Interconversion between charge and spin through spin-orbit coupling lies at the heart of condensed-matter physics. In normal metal/ferromagnet bilayers, a concerted action of the interconversions, the spin Hall effect and its inverse effect of normal metals, results in spin Hall magnetoresistance, whose sign is always positive regardless of the sign of spin Hall conductivity of normal metals. Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to interfacial spin-orbit coupling at normal metal/ferromagnet interfaces can give rise to negative spin Hall magnetoresistance. Given that recent studies found the conversion from charge currents to spin currents at normal metal/ferromagnet interfaces, our work provides a missing proof of its reciprocal spin-current-to-charge-current conversion at same interface. Our result suggests that interfacial spin-orbit coupling effect can dominate over bulk effects, thereby demanding interface engineering for advanced spintronics devices.

Publisher Correction: Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

The original version of this Article contained an error in ref. 27, which was incorrectly given with the wrong journal name as:Meyer, S. et al. Observation of the spin Nernst effect. Nat. Phys. 16, 977-981 (2017).The correct form of ref. 27 is:Meyer, S. et al. Observation of the spin Nernst effect. Nat. Mater. 16, 977-981 (2017).This has now been corrected in the PDF and HTML versions of the Article.

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.