Luminescence properties of Cr3+-doped near-infrared emissive fluoroyttrates for light-emitting diodes.

In this work, a series of Cr3+-doped A2NaYF6 (denoted as ANYF:Cr; A = K, Rb, and Cs) fluoroyttrate double-perovskites with broad blue excitation and near-infrared (NIR) emission bands were prepared using a high-temperature solid-state reaction method. The physicochemical and spectroscopic properties of the as-prepared products, including crystal structure, bandgap, morphology, luminescence behaviour and optical performance, were studied in detail. The results show that the Cr3+ activators undergo a decreasing crystal field in ANYF in the direction from K to Cs, yielding a red shift of the emission peak position from 758 to 786 nm, whilst the full-width-at-half-maximum (FWHM) expands from 98 to 104 nm. By virtue of the broadband NIR emission, clear structural images of the tangerine section, mini LED flashlight and circuit board were obtained by merging the optimal RNYF:Cr phosphor on a blue InGaN chip, implying its potential use in light-emitting diodes for non-destructive testing.

Structure and luminescence behaviour of a novel red-emitting fluoroperovskite for display backlight application.

In this work, we present a brand-new narrowband red-emitting fluoroperovskite via the introduction of Mn4+ into NaZnF3 through a facile co-precipitation method at room temperature. The physicochemical properties of the fluoroperovskite such as crystal and electronic structures, morphology, and elemental composition, as well as its spectroscopic properties such as luminescence behaviours and optical performance were characterized and investigated in detail. Evidence shows that NaZnF3:Mn4+ exhibits a uniform particulate shape with single-phase crystallinity. By virtue of the non-equivalent substitution and the [MnF6] octahedral distortion in the fluoride host, sharp red emissions of phonon sidebands and the zero-phonon line upon blue light excitation are identified. Benefiting from the unique spectral feature, a wide colour gamut of 104.1% NTSC is achieved by coating ß-SiAlON:Eu2+ and NaZnF3:Mn4+ on an InGaN chip, indicating the potential use of the Mn4+ fluoroperovskite as a colour converter for display backlight application.