Influence of Colloidal Au on the Growth of ZnO Nanostructures.

Vapor-liquid-solid processes allow growing high-quality nanowires from a catalyst. An alternative to the conventional use of catalyst thin films, colloidal nanoparticles offer advantages not only in terms of cost, but also in terms of controlling the location, size, density, and morphology of the grown nanowires. In this work, we report on the influence of different parameters of a colloidal Au nanoparticle suspension on the catalyst-assisted growth of ZnO nanostructures by a vapor-transport method. Modifying colloid parameters such as solvent and concentration, and growth parameters such as temperature, pressure, and Ar gas flow, ZnO nanowires, nanosheets, nanotubes and branched-nanowires can be grown over silica on silicon and alumina substrates. High-resolution transmission electron microscopy reveals the high-crystal quality of the ZnO nanostructures obtained. The photoluminescence results show a predominant emission in the ultraviolet range corresponding to the exciton peak, and a very broad emission band in the visible range related to different defect recombination processes. The growth parameters and mechanisms that control the shape of the ZnO nanostructures are here analyzed and discussed. The ZnO-branched nanowires were grown spontaneously through catalyst migration. Furthermore, the substrate is shown to play a significant role in determining the diameters of the ZnO nanowires by affecting the surface mobility of the metal nanoparticles.

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization.

Low-power, high-performance metal-insulator-metal (MIM) non-volatile resistive memories based on HfO2 high- k dielectric are fabricated using a drop-on-demand inkjet printing technique as a low-cost and eco-friendly method. The characteristics of resistive switching of Pt (bottom)/HfO2/Ag (top) stacks on Si/SiO2 substrates are investigated in order to study the bottom electrode's interaction with the HfO2 dielectric layer and the resulting effects on resistive switching. The devices show low Set and Reset voltages, high ON/OFF current ratio, and relatively low switching current (∼1 µA), which are comparable to the characteristics of current commercial CMOS memories. In order to understand the resistive switching mechanism, direct structural observation is carried out by field-emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM) on cross-sectioned samples prepared by focused ion beam (FIB). In addition, electron energy loss spectroscopy (EELS) inspections discard a silver electro-migration effect.

The role of oxidative debris on graphene oxide films.

We study the effect of oxidative impurities on the properties of graphene oxide and on the graphene oxide Langmuir-Blodgett films (LB). The starting material was grupo Antolín nanofibers (GANF) and the oxidation process was a modified Hummers method to obtain highly oxidized graphene oxide. The purification procedure reported in this work eliminated oxidative impurities decreasing the thickness of the nanoplatelets. The purified material thus obtained presents an oxidation degree similar to that achieved by chemical reduction of the graphite oxide. The purified and non-purified graphene oxides were deposited onto silicon by means of a Langmuir-Blodgett (LB) methodology. The morphology of the LB films was analyzed by field emission scanning microscopy (FE-SEM) and micro-Raman spectroscopy. Our results show that the LB films built by transferring Langmuir monolayers at the liquid-expanded state of the purified material are constituted by close-packed and non-overlapped nanoplatelets. The isotherms of the Langmuir monolayer precursor of the LB films were interpreted according to the Volmer's model.

Functionalization of reduced graphite oxide sheets with a zwitterionic surfactant.

Films of a few layers in thickness of reduced graphite oxide (RGO) sheets functionalized by the zwitterionic surfactant N-dodecyl-N,N-dimethyl-3-ammonio-1-propanesulfonate (DDPS) are obtained by using the Langmuir-Blodgett method. The quality of the RGO sheets is checked by analyzing the degrees of reduction and defect repair by means of X-ray photoelectron spectroscopy, atomic force microscopy (AFM), field-emission scanning electron microscopy (SEM), micro-Raman spectroscopy, and electrical conductivity measurements. A modified Hummers method is used to obtain highly oxidized graphite oxide (GO) together with a centrifugation-based method to improve the quality of GO. The GO samples are reduced by hydrazine or vitamin C. Functionalization of RGO with the zwitterionic surfactant improves the degrees of reduction and defect repair of the two reducing agents and significantly increases the electrical conductivity of paperlike films compared with those prepared from unfunctionalized RGO.